EUV Photomask with Multiple Chip Regions for Semiconductor Manufacturing
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Solution Overview
Problem
As semiconductor devices become highly integrated and reduced in size, there is a need for technologies that can effectively form circuit patterns in small areas, which existing photolithography processes struggle to achieve, especially with the absorption of extreme ultraviolet (EUV) light by refractive optical materials.
Innovation Solution
The method involves using an EUV photomask with multiple mask chip regions and scribe lane regions in a reflective optical system for EUV photolithography, where the EUV photomask includes specific alignment patterns and a structure that allows for precise alignment and exposure of semiconductor wafers using EUV light, enabling efficient semiconductor device manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a refractive optical system is used for photolithography, then alignment and exposure can be performed, but EUV light is absorbed by the refractive optical materials, preventing effective EUV photolithography
Solution Approach 1:
The patent inverts the optical approach from refraction to reflection. Instead of using refractive optical materials that absorb EUV light, the system employs a reflective optical system where mirrors reflect EUV light to perform photolithography. This fundamental inversion of the optical principle allows EUV light to be utilized effectively without absorption losses.
2Productivity
If the semiconductor device is highly integrated and reduced in size, then more circuit patterns can be formed in a smaller area, but existing photolithography processes cannot achieve the required precision
Solution Approach 1:
The patent changes the fundamental parameter of light wavelength from conventional visible or UV ranges to extreme ultraviolet (EUV) range with wavelengths of 13.5 nm or less. This parameter change enables higher resolution and precision in pattern formation, allowing highly integrated semiconductor devices to be manufactured with the required dimensional accuracy.
3Measurement precision
If multiple shot processes are performed to form alignment marks, then complete alignment information can be obtained, but the manufacturing process time increases
Solution Approach 1:
The patent merges multiple alignment mark formations into a single shot process. By designing the photomask to include multiple alignment mark regions that can be exposed simultaneously in one shot, the system obtains complete alignment information without requiring multiple sequential shot processes, thereby reducing manufacturing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the precise formation of semiconductor devices with improved alignment and exposure, addressing the challenges of EUV light absorption and enabling the production of high-integration semiconductor devices.
Implementation Method 1
irradiating light from an extreme ultraviolet (EUV) light source to the semiconductor wafer
Implementation Method 2
EUV photolithography processes generally use a reflective optical system rather than a refractive optical system
Data Source
AI summary
A method includes forming a first photomask including N mask chip regions and a first mask scribe lane region surrounding each of the N mask chip regions, forming a second photomask including M mask chip regions and a second mask scribe lane region surrounding each of the M mask chip regions, performing a first semiconductor process including a first photolithography process using the first photomask on a semiconductor wafer; and performing a second semiconductor process including a second photolithography process using the second photomask on the semiconductor wafer. The first photolithography process is an extreme ultraviolet (EUV) photolithography process, the first photomask is an EUV photomask, N is a natural number of 2 or more, and M is two times N.