EUV Photomask Particle Detection via Real-Time Optical Monitoring

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Solution Overview

Problem

In extreme ultraviolet (EUV) lithography, maintaining reticle quality is challenging due to the high sensitivity of defects on photomasks, which can lead to yield, quality, and reliability issues in semiconductor devices, as conventional methods like pellicle films are not effective in reducing particles and may cause heat-related problems.

Innovation Solution

A real-time particle monitoring system is implemented in the lithography process to detect and classify particles on or near the photomask using a light source and optical sensors, allowing for their removal before exposure, and generating a reticle map to track particle positions and sizes, thereby preventing defects from being transferred to the target substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If pellicle films are used in DUV processes, then particle reduction on the mask is achieved, but heat-related problems occur and particle reduction becomes insufficient for EUV wavelength requirements

Engineering Contradiction:
Improvereticle qualityVSAvoidheat-related problems
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent removes the pellicle film from the system entirely and replaces it with an in-situ particle detection and removal system that uses a sensor array and gas jet mechanism to detect and eliminate particles directly at the photomask surface during the lithography process

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces a gas jet as an intermediary mechanism that delivers particles to a collection point away from the photomask, enabling particle removal without direct contact with the photomask and avoiding heat-related problems associated with pellicle films

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If real-time particle monitoring is implemented, then particle detection accuracy is improved, but device complexity increases

Engineering Contradiction:
Improveparticle detection accuracyVSAvoidsystem complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent divides the particle detection function into multiple discrete sensor elements arranged in an array, where each sensor independently monitors a specific region of the photomask, enabling precise particle localization while maintaining manageable system complexity through modular architecture

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The sensor array serves multiple functions simultaneously: particle detection, particle localization, and real-time monitoring coverage of the entire photomask surface, reducing the need for separate detection systems and simplifying the overall device architecture

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the accuracy of pattern reproduction on the target substrate by identifying and removing particles in real-time, improving yield and reducing the need for manual inspection, while also eliminating the use of pellicles that can absorb EUV radiation and cause heat issues.

Implementation Method 1

determine an energy loss of the light beam... The determination of the particle may be based on a decrease in intensity or energy of the light

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS9607833B2System and method for photomask particle detection
Publication Date: 2017.03.28 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9607833B2 patent drawing
  • US9607833B2 patent drawing
  • US9607833B2 patent drawing

AI summary

The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.