EUV Photoresist Crosslinking for Etch-Resistant Pattern Stability
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Solution Overview
Problem
Existing semiconductor manufacturing methods using extreme ultraviolet (EUV) lithography face challenges in maximizing the effectiveness of EUV photons and achieving high resolution and etch resistance in photoresist materials, leading to pattern collapse and poor critical dimension distribution.
Innovation Solution
A method involving the use of a photoresist material layer with crosslinking molecules containing perfluoro alkyl moieties that dissociate upon exposure, forming strong crosslinking bonds and improving etch resistance, using molecules represented by specific formulas with metal organic compounds, and a solvent system to enhance sensitivity and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional photoresist materials are used in EUV lithography, then the manufacturing process is simple, but the etch resistance is poor and pattern collapse occurs
Solution Approach 1:
The patent employs composite photoresist materials comprising crosslinking molecules with perfluoro alkyl moieties combined with specific solvents (fluorinated solvents like HFE-7100, HFE-7200). This composite structure provides both high etch resistance through crosslinking and good solubility for pattern formation, resolving the contradiction between improved reliability and increased material complexity.
Solution Approach 2:
The patent changes the chemical parameters of the photoresist material by introducing crosslinking molecules with specific molecular weights (1,000-4,000) and perfluoro alkyl groups, and adjusting solvent composition ratios. These parameter changes enhance etch resistance while maintaining manufacturability through controlled material synthesis.
2Reliability
If photoresist materials with high crosslinking density are used, then etch resistance improves, but pattern collapse occurs due to reduced flexibility
Solution Approach 1:
The patent applies local quality by creating different functional regions within the photoresist material: crosslinked regions providing etch resistance and non-crosslinked or lightly crosslinked regions maintaining flexibility and structural stability. The perfluoro alkyl moieties are strategically positioned to provide localized crosslinking without excessive density, preventing pattern collapse while ensuring etch resistance.
Solution Approach 2:
The patent uses fluorinated solvents as intermediaries that facilitate controlled crosslinking. These solvents interact with the crosslinking molecules to modulate the crosslinking density and distribution, acting as a mediator between the conflicting requirements of high etch resistance and pattern stability. The solvent system enables gradual and uniform crosslinking that maintains structural integrity.
3Productivity
If single lithography process is used to reduce manufacturing steps, then productivity increases, but manufacturing precision decreases
Solution Approach 1:
The patent changes the sensitivity parameters of the photoresist material through molecular weight control (1,000-4,000) and perfluoro alkyl group incorporation, enabling single lithography process to achieve precision comparable to multi-step processes. The modified photoresist responds more effectively to EUV exposure, allowing precise critical dimension control in a single exposure step.
Solution Approach 2:
The patent makes the photoresist material multi-functional by incorporating crosslinking capability, solubility control, and sensitivity enhancement into a single material system. This universal photoresist performs multiple functions (etch resistance, pattern definition, sensitivity) that traditionally required separate process steps, enabling high productivity without sacrificing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method prevents pattern collapse and improves etch resistance, allowing for high-resolution hyperfine patterns to be formed with precise critical dimension control, reducing manufacturing costs through a single lithography process.
Implementation Method 1
the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer
Implementation Method 2
the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000
Data Source
AI summary
A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.