EUV Photosensitive Composition Resists Bridge Defects
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Solution Overview
Problem
EUV lithography processes face challenges with photon shot noise and line edge roughness due to the short wavelength of EUV light, leading to bridge defects and film thickness issues in resist films, where increasing exposure dose or photon absorption efficiency trade off with sensitivity and resolution.
Innovation Solution
A photosensitive composition for EUV light is developed, comprising a resin with increased polarity for alkali solubility and decreased organic solvent solubility, combined with a photoacid generator, which includes specific repeating units and a lactone structure, optimizing the A value and photoacid generator concentration to suppress bridge defects and film thickness reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the exposure dose is increased to reduce photon shot noise, then the number of incidence photons increases and line edge roughness improves, but the sensitivity of the resist film decreases
Solution Approach 1:
The patent changes the chemical composition parameters of the resist film by incorporating specific repeating units (Formulae A-1X, A-1Y) and lactone structures, along with optimizing the A value (hydrogen atom ratio) to within 0.12-0.14. This compositional parameter change enables the resist to achieve both high sensitivity and low line edge roughness without requiring increased exposure dose.
Solution Approach 2:
The patent creates a composite resist film structure by combining multiple functional components: resins with specific repeating units, lactone structures for absorption enhancement, and photoacid generators. This composite approach allows simultaneous optimization of sensitivity, resolution, and line edge roughness by distributing functions across different material components.
2Quantity of substance
If the resist film thickness is increased to absorb more photons, then the number of absorbed photons increases, but the resolution of the pattern decreases
Solution Approach 1:
The patent changes the optical absorption parameters of the resist film by incorporating lactone structures and optimizing the A value (hydrogen atom ratio) to within 0.12-0.14. This enables thin film formulations (reducing resolution loss) to absorb sufficient photons through enhanced per-unit absorption efficiency rather than increased thickness.
3Quantity of substance
If elements with high absorption efficiency for EUV light are introduced to improve absorption efficiency, then the number of incidence photons increases, but film thickness reduction in residual film region becomes significant
Solution Approach 1:
The patent optimizes the hydrogen atom ratio (A value) to within 0.12-0.14 and incorporates specific repeating units that balance absorption efficiency with solubility characteristics. This parameter optimization ensures uniform film thickness in residual regions while maintaining high EUV absorption efficiency.
Solution Approach 2:
The patent introduces resins with acid-responsive polarity changes that exhibit different solubility behaviors in different regions of the resist film. The repeating units (Formulae A-1X, A-1Y) and lactone structures create local solubility variations that suppress excessive thickness reduction in residual film regions while maintaining overall absorption efficiency.
Data Source
AI summary
Provided is a photosensitive composition for EUV light, which is capable of forming a pattern having excellent bridge defect suppressing properties and film thickness reduction suppressing property in a residual film region. Also provided are a pattern forming method and a method for manufacturing an electronic device. The photosensitive composition for EUV light includes a resin X of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, and a photoacid generator; or a resin Y which includes a repeating unit having a photoacid generating group and of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, in which the photosensitive composition for EUV light satisfies both Requirement 1 and Requirement 2.