EUV Photosensitive Composition Resin for Pattern Collapse Suppression
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Solution Overview
Problem
Current methods for manufacturing semiconductor devices using EUV lithography struggle to achieve both good Z-factor performance and suppressed pattern collapse simultaneously, as they often compromise on resolution, line edge roughness, and sensitivity.
Innovation Solution
A photosensitive composition for EUV light is developed, comprising a resin with increased polarity due to acid polarity, enhancing solubility in alkali developers and reducing solubility in organic solvents, along with a photoacid generator, which satisfies specific conditions to improve absorption efficiency and prevent pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photosensitive compositions are used for EUV lithography, then manufacturing process is simple, but Z-factor performance and pattern collapse suppression cannot be achieved simultaneously
Solution Approach 1:
The patent uses a composite resin system combining polycyclic vinyl ether resin and fluorinated vinyl ether resin to achieve both high Z-factor performance and pattern collapse suppression. The specific combination of resin types and ratios (70-99 wt% polycyclic vinyl ether resin and 1-30 wt% fluorinated vinyl ether resin) creates synergistic effects that improve resolution, line edge roughness, and sensitivity simultaneously while maintaining manufacturing feasibility
Solution Approach 2:
The patent optimizes specific parameters including the weight ratio of resin components (70-99/1-30), glass transition temperature (90-150°C), and molecular weight (1,000-50,000) to achieve the desired balance between Z-factor performance and pattern stability. These parameter optimizations enable the composition to form high-aspect-ratio patterns without collapse while maintaining excellent resolution
2Manufacturing precision
If resin polarity is increased to improve alkali developer solubility, then development performance improves, but solubility in organic solvent increases which may cause pattern collapse
Solution Approach 1:
The patent introduces fluorinated groups at specific local positions within the resin structure (in the vinyl ether side chains) to create regions of high polarity that enhance alkali developer solubility, while the overall polymer backbone maintains structural integrity. This localized modification allows the exposed portions to dissolve selectively in alkali developer without compromising the unexposed portions' stability in organic solvents
Solution Approach 2:
The patent uses fluorinated vinyl ether resin as a structural template that copies the desired high-polarity characteristics into the final resist film. The fluorinated resin component serves as a molecular model that, when combined with polycyclic vinyl ether resin, reproduces the optimal balance between alkali solubility and organic solvent resistance, enabling pattern collapse suppression
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in improved Z-factor performance, reduced line edge roughness, and suppressed pattern collapse, while maintaining high sensitivity and resolution, by optimizing the composition's absorption efficiency and development properties.
Implementation Method 1
a resin that has an increased polarity by the action of an acid polarity... and a photoacid generator
Implementation Method 2
a resin that has an increased polarity by the action of an acid polarity and thus, has an increased solubility in an alkali developer
Data Source
AI summary
Provided are a photosensitive composition for EUV light, capable of forming a pattern having a good Z-factor and suppressed pattern collapse, a pattern forming method, and a method for manufacturing an electronic device. The photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more. A=H×0.04+C×1.0+N×2.1+O×3.6+F×5.6+S×1.5+I×39.5/H×1+C×12+N×14+O×16+F×19+S×32+I×127 Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.