EUV Illumination Pixel Polarization for Higher Pattern Contrast
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Solution Overview
Problem
As semiconductor device sizes continue to shrink, lithography technologies face resolution issues due to optical restrictions, leading to reduced lithography performance, decreased pattern quality, and increased defects.
Innovation Solution
An illumination system for EUV lithography systems is configured with pixels that can be polarized in various configurations, including transverse electric (TE) and transverse magnetic (TM) polarization, allowing for free-form polarization to enhance pattern contrast and throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography is used to achieve smaller device sizes, then manufacturing cost is reduced, but optical restrictions cause resolution issues and reduced pattern quality
Solution Approach 1:
The patent changes the physical parameter of light wavelength from conventional ranges to extreme ultraviolet (EUV) range (13.5 nanometers), fundamentally altering the resolution capability of the lithography system to overcome optical restrictions and achieve smaller device sizes with higher pattern quality
2Manufacturing precision
If EUV lithography with reflective optics is used, then resolution and device size are improved, but system complexity and manufacturing difficulty increase
Solution Approach 1:
The patent applies local quality by configuring specific pixels in the illumination system with particular polarization states (TE, TM, or circular) tailored to the requirements of different pattern features, allowing optimized illumination for each local region rather than uniform illumination across the entire field
3Manufacturing precision
If polarization control is added to enhance pattern contrast, then lithography performance is improved, but device complexity increases
Solution Approach 1:
The patent implements dynamics by making the polarization state of each pixel configurable and changeable, allowing the illumination system to dynamically adapt its polarization configuration to match the specific requirements of different exposure patterns and process conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system improves pattern contrast and lithography throughput while reducing defects by tailoring radiation polarization to specific exposure patterns, enhancing semiconductor device yield and performance.
Implementation Method 1
An illumination system for EUV lithography systems is configured with pixels that can be polarized in various configurations, including transverse electric (TE) and transverse magnetic (TM) polarization, allowing for free-form polarization to enhance pattern contrast and throughput
Data Source
AI summary
An illumination system includes a plurality of pixels (or spots) that are (or may be) configured in one or more polarization configuration types. The pixels of the illumination system may be configured to promote particular types of polarization (e.g., transverse electric (TE) polarization, transvers magnetic (TM) polarization) to increase pattern contrast while achieving suitable exposure operation throughput. Moreover, the pixels of the pixels of the illumination system may be configured to achieve free-form (arbitrary or freely-configurable) polarization, which permits the polarization of radiation to be tailored to particular exposure operation patterns and other parameters.