EUV Illumination System Electron Beam Polarization Control

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Solution Overview

Problem

Conventional EUV radiation sources, such as LPP and GDP, face challenges in providing a resolution-optimized illumination with adjustable polarization, which is essential for precise object illumination in projection lithography.

Innovation Solution

An EUV illumination system utilizing an electron beam-based light source with a polarization setting device that adjusts the electron beam's polarization, allowing for linear, elliptical, or circular polarization, and a scanning device synchronized with the polarization setting device to achieve flexible illumination adjustments, avoiding the need for movable parts and compensating for polarization changes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional EUV radiation sources (LPP or GDP) are used, then the illumination system can operate, but the resolution and polarization control are insufficient for precision lithography

Engineering Contradiction:
Improveillumination resolutionVSAvoidpolarization adjustability
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent applies parameter changes by controlling the polarization state of the electron beam through adjustable deflecting effects. The polarization setting device modifies the electron beam parameters (polarization state) to generate EUV light with different polarization states, thereby achieving both high resolution and polarization adaptability in the illumination system

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If a polarization setting device with movable parts is used to adjust electron beam deflection, then polarization control is achieved, but the device complexity increases

Engineering Contradiction:
Improvepolarization controlVSAvoidsystem structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent replaces mechanical systems with electromagnetic systems. Instead of using mechanical movable parts to adjust polarization, the invention uses electromagnetic deflecting effects applied to the electron beam. This substitution eliminates complex mechanical structures while achieving precise polarization control through electromagnetic field manipulation

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system provides a high-resolution, adjustable polarization output beam that can be tailored to specific illumination requirements, enhancing the precision and flexibility of the illumination system, thereby improving the resolution and efficiency of the EUV projection lithographic exposure apparatus.

Implementation Method 1

an electron beam supply device (2a), an EUV generating device (2c) which is supplied with an electron beam (2b) by the electron beam supply device (2a)

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Implementation Method 2

an EUV generating device (2c) which is supplied with an electron beam (2b) by the electron beam supply device (2a)

Methodology Applied
Scientific EffectElectron impact radiation: Cathodoluminescence

Implementation Method 3

a polarization setting device (25), which exerts an adjustable deflecting effect on the electron beam (2b) for setting the polarization of the output beam (3)

Methodology Applied
Scientific EffectElectromagnetic deflection: Electromagnetic Induction

Data Source

PatentEP2883112B1Illumination system for an EUV projection lithographic projection exposure apparatus and method for operating the same
Publication Date: 2022.10.05 CARL ZEISS SMT GMBH
  • EP2883112B1 patent drawingFigure 1
  • EP2883112B1 patent drawingFigure 2
  • EP2883112B1 patent drawingFigure 3

AI summary

An illumination system for an EUV projection lithographic projection exposure apparatus (1) comprises an EUV light source (2), which generates an output beam (3) of EUV illumination light with a predetermined polarization state. An illumination optical unit (5) guides the output beam (3) along an optical axis, as a result of which an illumination field (14) in a reticle plane (15) is illuminated by the output beam (3). The light source (2) comprises an electron beam supply device (2a), an EUV generating device (2c) and a polarization setting device (25). The EUV generating device (2c) is supplied with an electron beam (2b) by the electron beam supply device (2a). The polarization setting device (25) exerts an adjustable deflecting effect on the electron beam (2b) for setting the polarization of the output beam (3). This results in an illumination system, which operates on the basis of an electron beam-based EUV light source and provides an output beam, which is improved for a resolution-optimized illumination.