EUV Photolithography Process Solution for Pattern Collapse Control
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Solution Overview
Problem
The challenge in photolithography is the high incidence of pattern lifting defects during the development of fine photoresist patterns, particularly when using extreme ultraviolet light, due to insufficient etching resistance and pattern collapse caused by excessive capillary force and non-uniform surface tension in current surfactant solutions.
Innovation Solution
A process solution composition incorporating a fluorine-based surfactant and pattern reinforcing agents, such as triol or tetraol derivatives, is used to reduce pattern lifting defects by controlling surface tension and capillary force, thereby preventing pattern collapse and line width roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If hydrocarbon-based surfactants are used in water-based process solution, then photoresist wall surface is imparted with hydrophobicity which reduces melting and collapse, but the surfactants have strong tendency to agglomerate, deteriorating uniformity in properties of the process solution
Solution Approach 1:
The patent changes the chemical structure of the surfactant from hydrocarbon-based to fluorocarbon-based. This parameter change in molecular composition fundamentally alters the surfactant's properties: fluorocarbon surfactants achieve the necessary surface tension reduction and hydrophobicity impartation to photoresist patterns while exhibiting superior solution uniformity and resistance to agglomeration compared to hydrocarbon-based alternatives.
Solution Approach 2:
The patent employs a composite approach by combining fluorocarbon surfactant with specific additives including triol derivatives, tetraol derivatives, and pattern reinforcing agents. This composite formulation enhances both the uniformity of the process solution and the effectiveness in preventing pattern collapse, while the synergistic interaction among components prevents agglomeration issues.
2Object-affected harmful factors
If excessive amount of surfactant is used to reduce surface tension and capillary force, then pattern lifting defect is reduced, but pattern melting occurs which leads to pattern collapsing
Solution Approach 1:
The patent optimizes the concentration parameter of the fluorocarbon surfactant to a specific range (0.001-0.1 wt%). This precise parameter control achieves the optimal balance: sufficient surface tension reduction to minimize capillary force and pattern lifting defects, while avoiding excessive surfactant concentration that would cause pattern melting and collapse.
Solution Approach 2:
The patent applies local quality enhancement by incorporating pattern reinforcing agents that specifically target and strengthen the photoresist pattern structure at critical locations. The combination of fluorocarbon surfactant with triol/tetraol derivatives and pattern reinforcing agents creates localized reinforcement where needed, preventing collapse without requiring excessive overall surfactant concentration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively lowers the pattern lifting defect level and manufacturing costs by maintaining pattern integrity and reducing defects during photoresist development, as demonstrated by improved results in experimental examples compared to comparative examples.
Implementation Method 1
a fluorine-based surfactant is used... the effect of lowering the pattern lifting defect level was improved
Implementation Method 2
it causes pattern melting which leads to pattern collapsing... lowering the pattern lifting defect level
Implementation Method 3
a pattern reinforcing agent represented by Formula (1) and a material selected from the group consisting of triol derivatives, tetraol derivatives, and mixtures thereof are used
Data Source
AI summary
The present disclosure relates to a process solution composition for EUV photolithography and a pattern forming method using same. The process solution composition includes 0.00001% to 0.01% by weight of a fluorine-based surfactant, 0.00001% to less than 0.01% by weight of a pattern reinforcing agent represented by Formula (1), and 0.00001% to 0.001% by weight of a material selected from the group consisting of triol derivatives, tetraol derivatives, and mixture thereof, and the balance being water.