EUV Reflector Slit Blocking for Tin Contamination Control
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Solution Overview
Problem
In advanced semiconductor manufacturing, the scaling down of EUV lithography systems leads to challenges in maintaining high EUV light intensity due to tin contamination on mirror surfaces, resulting in reduced power output and increased downtime for cleaning and recalibration.
Innovation Solution
A blocking structure is attached to the mirror in the EUV scanner, allowing for individual blocking of mirror slits associated with contamination, reducing reflectivity impact and minimizing the need for cleaning and recalibration, thereby maintaining EUV light intensity and reducing downtime.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If cleaning and recalibration of mirrors are performed to remove tin contamination, then reflectivity and power output are improved, but downtime and productivity are reduced
Solution Approach 1:
The system performs preliminary actions by blocking individual mirror slits before tin contamination significantly degrades performance. The blocking structure is positioned in advance to prevent contamination from affecting critical reflectivity, thereby avoiding the need for frequent cleaning interruptions and maintaining continuous productivity.
Solution Approach 2:
The mirror surface is segmented into multiple individual slits that can be independently blocked. This segmentation allows the system to address contamination at specific locations without affecting the entire mirror surface, enabling localized maintenance that minimizes downtime and maintains overall power output.
2Power
If individual mirror slits are blocked to mitigate tin contamination, then reflectivity impact is reduced, but device complexity increases
Solution Approach 1:
The blocking structure implements local quality by providing individualized blocking elements for each mirror slit only where contamination occurs. Rather than uniformly complicating the entire mirror system, the blocking elements are selectively positioned at specific slit locations affected by tin buildup, maintaining simplicity where the mirror surface is clean.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances EUV light power output and reduces downtime by selectively blocking contaminated areas, improving the throughput of semiconductor wafer production.
Implementation Method 1
blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector
Implementation Method 2
directing radiation reflected from a collector of the lithography system toward the mask layer
Data Source
AI summary
A method includes: depositing a mask layer over a substrate; directing radiation reflected from a collector of a lithography system toward the mask layer according to a pattern; blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector of the lithography system; forming openings in the mask layer by removing regions of the mask layer exposed to the radiation; and removing material of a layer underlying the mask layer exposed by the openings.