EUV Patterning Repairing Layer for Line Break Defects
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Solution Overview
Problem
EUV photolithography faces challenges in achieving smaller feature sizes due to defects such as broken photoresist lines and microbridging in multilayer lithography stacks, leading to device failures and decreased performance.
Innovation Solution
A method involving the formation of a photolithographic patterning stack with a hardmask layer, photoresist layer, and a repairing layer from functionalized material, where the repairing layer is bonded only to the surfaces of patterned photoresist portions to address defects like line breaks and photoresist residue.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV photolithography is used to achieve smaller feature sizes, then manufacturing precision is improved, but defects such as broken photoresist lines and microbridging increase
Solution Approach 1:
The patent applies preliminary action by forming a repairing layer from functionalized material before final patterning. This repairing layer is deposited on the hardmask layer and then selectively removed in trench areas, pre-establishing a structure that will protect against line breaks and microbridging defects during subsequent photolithography processes
Solution Approach 2:
The patent uses an intermediary approach by introducing a repairing layer as a mediator between the hardmask layer and the photoresist layer. This intermediate layer serves as a protective interface that prevents direct interaction between the photoresist and hardmask that could cause defects, while still allowing pattern transfer
2Manufacturing precision
If multilayer lithography stacks are used for EUV patterning, then manufacturing precision is improved, but photoresist residue and line breaks increase
Solution Approach 1:
The patent applies the taking out principle by selectively removing material from specific areas. The repairing layer is deposited uniformly across the surface, then selectively etched away in trench areas between patterned photoresist lines, extracting the repairing layer only where needed to prevent defects while maintaining it in areas where pattern integrity is critical
Solution Approach 2:
The patent implements local quality by creating spatially varying properties in the patterning stack. The repairing layer is present in some areas (on top of patterned photoresist lines) and absent in other areas (in trench regions), providing localized protection against defects only where patterned features are formed, while allowing clean trench areas for proper pattern separation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes photoresist residue and repairs line breaks, enhancing the continuity and reliability of patterned lines, thereby improving device performance and reducing defects in EUV photolithography.
Implementation Method 1
A repairing layer is formed from functionalized material. The repairing layer is formed in contact with and only bonded to surfaces of each patterned portion of the plurality of portions.
Data Source
AI summary
A photolithography patterning stack and method for repairing defects in the stack. The stack includes an organic planarization layer, a hardmask layer, and a plurality of patterned photoresist lines in contact with the hardmask layer. A plurality of trenches is situated between the plurality of patterned photoresist lines. Each trench exposes a portion of the hardmask layer. A repairing layer is formed in contact with and only bonded to surfaces of the plurality of patterned photoresist lines. The method includes forming a photolithographic patterning stack. The stack includes at least a hardmask layer formed on one or more underlayers and a photoresist layer formed in contact with the hardmask layer. The photoresist layer is patterned into a plurality of patterned portions. A repairing layer is formed in contact with and only bonded to surfaces of each patterned portion of the plurality of portions.