Radiation-Sensitive Resin Composition for EUV Lithography
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Solution Overview
Problem
Current radiation-sensitive resin compositions for EUV lithography face a trade-off between sensitivity, resolution, and nano edge roughness, making it difficult to achieve high sensitivity and low nano edge roughness simultaneously, which is crucial for forming fine patterns with line widths of 32 nm or less.
Innovation Solution
A radiation-sensitive resin composition incorporating an acid-dissociable group-containing resin and a carboxylic acid generator, along with a photoacid generator that generates an acid with a pKa of 2 or less, to create a chemically-amplified positive-tone resist film that effectively responds to deep ultraviolet rays, X-rays, or electron beams, while minimizing nano edge roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the sensitivity of a positive-tone resist is increased for EUV light, then the wafer processing time is reduced, but the resolution and nano edge roughness deteriorate
Solution Approach 1:
The patent uses a composite resin system combining polycycloolefin resin and polyester resin with specific functional groups, along with multiple acid generators (sulfonic acid generator and carboxylic acid generator), to achieve both high sensitivity and low nano edge roughness. This composite approach allows the resist to simultaneously exhibit high etch resistance and controlled chemical amplification for fine pattern formation.
Solution Approach 2:
The patent optimizes specific parameters including the glass transition temperature (Tg) of the resin composition (80°C to 150°C), the pKa values of acid generators (sulfonic acid generator with pKa ≤ 2, carboxylic acid generator with pKa between 3-6), and the molecular weight distribution of polymers. These parameter optimizations enable high sensitivity while maintaining pattern fidelity and reducing edge roughness.
2Productivity
If high sensitivity is achieved in EUV positive-tone resist, then processing efficiency improves, but nano edge roughness increases causing yield decrease
Solution Approach 1:
The patent optimizes the glass transition temperature (Tg) of the resin composition to be between 80°C and 150°C, which provides the right balance between sensitivity and pattern stability. Additionally, the patent selects acid generators with specific pKa ranges (sulfonic acid generator with pKa ≤ 2 and carboxylic acid generator with pKa between 3-6) to control the chemical amplification process, thereby reducing nano edge roughness while maintaining high sensitivity and improving yield.
Solution Approach 2:
The patent employs a composite resin system combining polycycloolefin resin and polyester resin with specific functional groups, along with multiple acid generators, to achieve both high sensitivity and low nano edge roughness. This composite approach allows the resist to simultaneously exhibit high etch resistance and controlled chemical amplification for fine pattern formation, thereby improving both processing efficiency and yield.
3Manufacturing precision
If fine patterns with line widths of 32 nm or less are formed, then device integration increases, but nano edge roughness becomes more critical affecting electrical properties
Solution Approach 1:
The patent optimizes the glass transition temperature (Tg) of the resin composition to be between 80°C and 150°C, which provides the right balance between sensitivity and pattern stability for ultra-fine patterning. Additionally, the patent selects acid generators with specific pKa ranges (sulfonic acid generator with pKa ≤ 2 and carboxylic acid generator with pKa between 3-6) to control the chemical amplification process, thereby reducing nano edge roughness and ensuring good electrical properties in fine patterns.
Solution Approach 2:
The patent employs a composite resin system combining polycycloolefin resin and polyester resin with specific functional groups, along with multiple acid generators, to achieve both high sensitivity and low nano edge roughness. This composite approach allows the resist to simultaneously exhibit high etch resistance and controlled chemical amplification for fine pattern formation, thereby improving both processing efficiency and yield.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high sensitivity, excellent resolution, and low nano edge roughness, enabling the stable and accurate formation of fine patterns, thereby improving the yield and electrical properties of semiconductor devices.
Implementation Method 1
a photoacid generator that generates an acid with a pKa of 2 or less upon exposure
Implementation Method 2
create a chemically-amplified positive-tone resist film
Data Source
AI summary
A radiation-sensitive resin composition includes an acid-dissociable group-containing resin, and a compound shown by the following general formula (1).wherein Z− represents a monovalent anion shown by a general formula (2), M+ represents a monovalent onium cation, R1 represents a linear or branched alkyl group having 1 to 12 carbon atoms substituted or unsubstantiated with a fluorine atom, or a linear or branched alkoxy group having 1 to 12 carbon atoms, and n is 1 or 2.