EUV Resist Composition for Pattern Collapse Suppression
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Solution Overview
Problem
In semiconductor manufacturing, forming finer patterns with extreme ultraviolet (EUV) light is challenging due to issues like pattern collapse and missing defects during the development process, particularly when trying to increase resist film thickness to absorb more photons.
Innovation Solution
A negative tone photosensitive composition for EUV light is developed, comprising a resin with an acid-decomposable group protected by a protective group that is eliminated by acid, where the ClogP value of the resin after protection removal is 1.40 or less, and specific relationships between EUV light absorption efficiency and film thickness shrinkage are maintained to prevent pattern collapse and defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the resist film thickness is increased to absorb more photons, then the sensitivity to EUV light is improved, but pattern collapse occurs during development
Solution Approach 1:
The patent changes the chemical parameters of the resist system by introducing a specific resin composition with acid-decomposable groups and controlled ClogP values. This allows the resist film to maintain structural integrity at thicker dimensions while remaining sensitive to EUV light, resolving the contradiction between photon absorption and pattern stability
Solution Approach 2:
The patent uses a composite resin system combining multiple functional components: resin A with acid-decomposable groups, resin B as matrix, and photoacid generator. This composite structure enables simultaneous achievement of high EUV sensitivity and pattern collapse resistance by distributing different functions across different material components
2Use of energy by moving object
If the resist film thickness is increased to absorb more photons, then the sensitivity to EUV light is improved, but missing defects occur during development
Solution Approach 1:
The patent optimizes the chemical composition parameters of the resist, specifically the ClogP values and acid-decomposable group content, to achieve uniform development behavior. This prevents missing defects while maintaining high photon absorption capability through increased film thickness
Solution Approach 2:
The patent introduces a specific photoacid generator and resin combination that acts as an intermediary system to mediate between photon absorption and development uniformity. The photoacid generator ensures uniform acid distribution throughout the thicker film, preventing missing defects while maintaining sensitivity
3Ease of operation
If a developer including organic solvent is used for negative tone patterning, then the developability is improved, but pattern collapse and missing defects are more likely to occur
Solution Approach 1:
The patent changes the chemical parameters of the resist formulation, specifically controlling the ClogP values and incorporating acid-decomposable groups, to create optimal interaction with organic solvent developers. This enables the resist to maintain pattern integrity while achieving good developability through controlled chemical response to the developer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively suppresses pattern collapse and missing defects, enabling the formation of finer patterns with improved developability and reduced defects in electronic device manufacturing.
Implementation Method 1
a photoacid generator
Implementation Method 2
a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid
Data Source
AI summary
The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).