Perhalogenated Resist Copolymer for EUV Micro-Pattern Etch Resistance
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Solution Overview
Problem
Existing resist compounds struggle to form micro-patterns with high etch resistance and sensitivity, particularly in the context of highly integrated and miniaturized semiconductor devices, and lack sufficient absorbance for extreme UV ultraviolet rays and electron beams.
Innovation Solution
A resist compound represented by Formula 1, comprising a copolymer with perhalogenated alkyl or perhalogenated alkyl ether groups, is used to form a pattern with high absorbance for extreme UV rays and electron beams, and includes a copolymer with alternating units of perhalogenated alkyl and metal elements like tin, ensuring uniform chemical composition and improved etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional resist compounds are used for photolithography, then the basic patterning function is achieved, but the etch resistance and sensitivity are insufficient for highly integrated and miniaturized semiconductor devices
Solution Approach 1:
The patent applies composite materials by combining perhalogenated alkyl groups (providing etch resistance) with metal elements like tin (improving sensitivity and absorbance) within a copolymer structure. This composite approach allows the resist compound to simultaneously achieve high etch resistance and high sensitivity for micro-pattern formation, resolving the contradiction between these two properties.
Solution Approach 2:
The patent changes the chemical composition parameters of the resist compound by introducing perhalogenated alkyl groups and metal elements into the copolymer structure. This parameter change enhances both etch resistance and sensitivity, enabling the material to meet the requirements for highly integrated semiconductor devices.
2Ease of manufacture
If the resist compound structure is simplified for ease of manufacture, then production becomes easier, but the absorbance for extreme UV ultraviolet rays and electron beams is insufficient
Solution Approach 1:
The patent modifies the chemical parameters of the copolymer by incorporating perhalogenated alkyl groups and metal elements, which significantly enhance absorbance for extreme UV rays and electron beams. Despite these structural modifications, the copolymer remains synthetically accessible through standard polymerization methods, maintaining ease of manufacture.
3Length of moving object
If the resist pattern width is reduced to achieve narrower pitches, then device integration is improved, but the etch resistance decreases
Solution Approach 1:
The patent uses composite materials with perhalogenated alkyl groups (providing etch resistance) and metal elements (enhancing sensitivity). This composition allows the formation of narrow resist patterns with high etch resistance, as the metal elements improve the pattern definition while the perhalogenated groups maintain resistance against etching processes.
Solution Approach 2:
The patent applies local quality by strategically placing metal elements and perhalogenated alkyl groups within the copolymer structure to optimize different regions of the resist compound. This localized optimization enables narrow pattern widths while maintaining high etch resistance in the critical pattern regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound enables the formation of resist patterns with narrow widths and pitches, enhanced etch resistance, and improved sensitivity, leading to more efficient semiconductor device manufacturing.
Implementation Method 1
The compound may have high absorbance with respect to extreme UV ultraviolet rays and electron beams
Implementation Method 2
The compound may have excellent etch resistance
Data Source
AI summary
Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1: