EUV Resist Composition with Formula 1 Compound for High Sensitivity
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Solution Overview
Problem
Conventional resist compositions exhibit insufficient sensitivity to exposure light sources, particularly in the formation of further thinned patterns, especially when using extreme ultraviolet (EUV) lithography, which requires higher sensitivity for improved throughput.
Innovation Solution
A compound with a specific structure, including a constitutional unit represented by the formula (1), is used to enhance the exposure sensitivity of resist materials, formulated into a composition with specific concentrations and impurity levels to improve sensitivity and reduce residue defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used for pattern formation, then the basic film formation function is achieved, but the exposure sensitivity is insufficient for further thinned patterns and EUV lithography
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material by incorporating specific compounds (formula 1) with iodine atoms and hydroxyl groups, and by controlling impurity levels (potassium ≤1 ppm, peroxide ≤10 ppm). This compositional parameter change enables the resist to achieve high exposure sensitivity for EUV lithography while maintaining pattern formation capability
Solution Approach 2:
The patent creates a composite resist composition by combining the specific compound of formula (1) with other resist components, where the compound contains both iodine (for sensitivity) and hydroxyl groups (for solubility control). This composite structure achieves both high exposure sensitivity and proper film formation function
2Length of moving object
If the dimension of the resist pattern is reduced to several nm to ten-odd nm, then finer patterns are achieved, but the sensitivity to exposure light source must be increased significantly
Solution Approach 1:
The patent changes the chemical composition parameters by incorporating compounds with specific functional groups (iodine, hydroxyl, ester, acetal, carbonate) that enhance sensitivity. The controlled impurity levels (potassium ≤1 ppm, peroxide ≤10 ppm) are critical parameters that enable high sensitivity for sub-10nm pattern formation
3Productivity
If extreme ultraviolet (EUV) lithography is used to improve throughput, then production efficiency is increased, but the resist composition requires particularly high sensitivity
Solution Approach 1:
The patent optimizes the chemical composition parameters of the resist by incorporating compound (1) with specific functional groups and controlling impurity levels. This enables the resist to achieve the particularly high sensitivity required for EUV lithography, thereby enabling improved throughput
4Stability of the object's composition
If conventional compositions are used for further thinned patterns, then the basic resist function is maintained, but the exposure sensitivity is insufficient
Solution Approach 1:
The patent changes the compositional parameters by incorporating compound (1) with specific functional groups and strictly controlling impurity levels (potassium ≤1 ppm, peroxide ≤10 ppm). This enables the resist to achieve high exposure sensitivity for further thinned patterns while maintaining composition stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves higher exposure sensitivity and improved pattern formation, particularly in EUV applications, with enhanced stability and reduced residue defects, enabling the formation of finer patterns with increased resolution.
Implementation Method 1
lithography with electron beam or extreme ultraviolet (EUV) aims at forming fine patterns of several nm to ten-odd nm. Accordingly, there is a demand for a resist composition having higher sensitivity to an exposure light source
Data Source
AI summary
Provided is a compound, a polymer, a composition, a composition for film formation, a pattern formation method, an insulating film formation method, and a method for producing a compound, by which a resist having excellent exposure sensitivity can be obtained.A compound represented by the following formula (1):wherein RA is a hydrogen atom, a methyl group, or a trifluoromethyl group; RX is ORB or a hydrogen atom; RB is a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms; and P is a hydroxy group, an alkoxy group, an ester group, an acetal group, a carboxyalkoxy group, a carbonate ester group, a nitro group, an amino group, a carboxyl group, a thiol group, an ether group, a thioether group, a phosphine group, a phosphone group, a urethane group, a urea group, an amide group, an imide group, or a phosphate group.