Resist Composition for EUV Lithography Using Formula 1 Photosensitive Agent
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current resist compositions for semiconductor manufacturing face challenges in achieving high accuracy and uniformity in pattern formation due to limitations in photon shot noise effects and deprotection reaction efficiency, particularly when using extreme ultraviolet radiation, which results in relatively large line width roughness and reduced pattern precision.
Innovation Solution
Incorporating a specific compound represented by Formula 1, which acts as a photosensitive agent, into the resist composition, allowing for improved HOMO energy levels and low ionization potential, enhancing the deprotection reaction efficiency and reducing photon shot noise effects by producing secondary electrons and hydrogen ions effectively, even with a small number of photons.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If extreme ultraviolet radiation is used for exposure, then finer patterning can be achieved, but line width roughness increases and pattern precision decreases
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by introducing a compound with specific HOMO energy level (≥6.0 eV) and low ionization potential. This parameter change enables more efficient photoelectron generation and deprotection reactions, reducing line width roughness while maintaining fine patterning capability
Solution Approach 2:
The patent creates a composite resist system combining a polymer base material with a specifically designed compound (Formula 1 or 1A) that has optimized electronic properties. This composite approach allows the resist to benefit from both the polymer's structural properties and the additive's enhanced photoresponsivity, improving pattern precision
2Productivity
If conventional photosensitive agents are used, then deprotection reaction can occur, but reaction efficiency is insufficient leading to reduced pattern accuracy
Solution Approach 1:
The patent optimizes the electronic parameters of the photosensitive compound, specifically setting HOMO energy level ≥6.0 eV and maintaining low ionization potential. These parameter changes enhance the compound's ability to generate photoelectrons and facilitate deprotection reactions, simultaneously improving reaction efficiency and pattern accuracy
Solution Approach 2:
The compound of Formula 1 or 1A acts as an intermediary that mediates between the extreme ultraviolet radiation and the polymer matrix. It absorbs photons efficiently, generates photoelectrons, and facilitates deprotection reactions, thereby enhancing the overall effectiveness of the exposure process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition with the compound represented by Formula 1 improves the accuracy and uniformity of the resist pattern, reducing line width roughness and enhancing the precision of the exposure process, resulting in improved CD uniformity and pattern formation efficiency.
Implementation Method 1
producing secondary electrons and hydrogen ions effectively, even with a small number of photons
Data Source
AI summary
A resist composition including a polymer; and a compound represented by Formula 1,in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,