EUV Resist Overlayer Film Composition for Light Blocking
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Solution Overview
Problem
In EUV lithography, existing technologies face challenges in forming a resist overlayer film that does not intermix with the EUV resist, effectively blocks unfavorable exposure light such as UV and DUV light, and can be developed after exposure, while maintaining high solubility in alcoholic solvents to prevent pattern deterioration and improve resolution.
Innovation Solution
A composition for forming an EUV resist overlayer film containing a resin with a naphthalene ring and hydrophilic groups, such as hydroxy, carboxy, or sulfo groups, along with a solvent, which selectively absorbs DUV light and is soluble in alcoholic solvents, allowing for the formation of a film that can be developed post-exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a polymer including beryllium, boron, carbon, silicon, zirconium, niobium, or molybdenum is applied onto an EUV resist to protect from contaminants and unfavorable radiation, then protection from UV and DUV light is improved, but the film formation requires special apparatus such as vacuum deposition system, CVD system, or sputtering system
Solution Approach 1:
The patent employs an organic anti-reflective coating that can be applied using conventional spin-coating equipment rather than expensive vacuum deposition or sputtering systems. This disposable-like approach uses a simpler, more accessible method to achieve the same protective function against UV and DUV light, eliminating the need for complex apparatus.
Solution Approach 2:
The patent changes the material parameters by using organic compounds with specific molecular structures (containing benzene rings, naphthalene rings, or anthracene rings) that inherently absorb UV and DUV light. This parameter change from inorganic to organic materials allows the use of simpler application equipment while maintaining the protective function.
2Ease of manufacture
If an organic anti-reflective coating is used to suppress reflections without special systems, then ease of manufacture is improved, but the coating may intermix with the EUV resist causing pattern deterioration
Solution Approach 1:
The patent introduces a gradient in solubility parameters between the organic anti-reflective coating and the EUV resist. The coating is designed with specific solubility characteristics that create a clear interface with the resist, preventing intermixing at the boundary while maintaining the desired optical properties for reflection suppression.
Solution Approach 2:
The patent uses composite organic materials combining specific structural units (benzene rings, naphthalene rings, or anthracene rings) with carefully selected solubility parameters. This composite approach allows simultaneous achievement of light absorption properties and controlled interfacial behavior with the EUV resist, preventing pattern deterioration.
3Object-affected harmful factors
If the organic anti-reflective coating blocks unfavorable exposure light, then protection from UV and DUV light is improved, but the coating must be removable with developer after exposure
Solution Approach 1:
The patent designs the organic anti-reflective coating with built-in chemical groups that are sensitive to the developer solution. These groups are preliminarily arranged in the molecular structure to enable easy removal after the lithography process, ensuring that the coating can be cleanly eliminated without affecting the underlying resist pattern.
Solution Approach 2:
The patent changes the chemical parameters of the coating by incorporating functional groups that undergo solubility changes upon exposure to developer. This parameter change allows the coating to transition from a stable, light-blocking state during lithography to a readily removable state after exposure, facilitating easy cleanup.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively blocks DUV light, preventing pattern deterioration and improving resolution by selectively transmitting EUV light, and can be easily removed with a developer, ensuring no intermixing with the underlying EUV resist.
Implementation Method 1
a resin containing a naphthalene ring in a main chain or in a side chain... blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone
Data Source
AI summary
There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.