EUV Resist Polymer Cross-Linking for Resolution and Defect Control
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Solution Overview
Problem
Current chemically amplified resists used in semiconductor manufacturing, especially with high-energy rays like EUV, face challenges in sensitivity and resolution due to the low number of photons, leading to noise and pattern defects.
Innovation Solution
A polymer with a specific repeating unit, combined with a photoacid generator and organic solvent, forms a resist composition that improves sensitivity and resolution by cross-linking under acid catalysts, enhancing the resist film's properties and pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If chemically amplified resist is used with high-energy rays (EUV), then sensitivity and resolution should improve, but the low number of photons causes noise and pattern defects
Solution Approach 1:
The patent uses a composite resist composition comprising a specific polymer (with repeating units containing aromatic groups and carboxylic acid groups), a photoacid generator, and an organic solvent. This composite formulation enhances the resist's ability to form fine patterns by improving sensitivity and resolution while reducing noise and pattern defects caused by low photon counts in EUV lithography
Solution Approach 2:
The patent modifies the chemical structure parameters of the base resin by incorporating specific repeating units with aromatic groups (C6-C30) and carboxylic acid groups, along with controlling the molecular weight and composition ratios. These parameter changes optimize the resist's response to EUV radiation, improving pattern formation quality despite low photon availability
2Manufacturing precision
If polymer with specific repeating units is used to improve sensitivity and resolution, then pattern formation quality improves, but manufacturing complexity increases
Solution Approach 1:
The patent introduces specific functional groups (carboxylic acid groups, aromatic groups) at localized positions within the polymer chain rather than uniform distribution. This local quality approach allows the polymer to provide enhanced pattern formation quality through specific interactions at critical locations while maintaining a relatively simple overall polymer structure that is feasible to manufacture
3Strength
If cross-linking is enhanced to improve etch resistance, then pattern durability improves, but thermal stability may be compromised
Solution Approach 1:
The patent carefully controls the cross-linking density and type by selecting specific polymer structures with carboxylic acid groups that can form controlled cross-links. The molecular weight, composition ratios, and cross-linking degree are optimized to achieve sufficient etch resistance while maintaining thermal stability through balanced network structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer composition achieves improved sensitivity, resolution, and etch resistance, reducing pattern defects and noise, and maintaining thermal stability, making it suitable for fine pattern formation in semiconductor manufacturing.
Implementation Method 1
A chemically amplified resist enables patterning by changing the solubility of a base resin in a developer by reacting an acid, which has been formed by a reaction between light and a photoacid generator
Implementation Method 2
A polymer with a specific repeating unit, combined with a photoacid generator and organic solvent, forms a resist composition that improves sensitivity and resolution by cross-linking under acid catalysts
Data Source
AI summary
Provided are a polymer including a first repeating unit represented by Formula 1, a resist composition including the polymer, and a method of forming a pattern using the resist composition:wherein descriptions of L11 to L14, a11 to a13, A11, X11, R11, R12, b12 and p in Formula 1 are provided in the present specification.