Non-Chemically Amplified Resist Composition for EUV Resolution
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Solution Overview
Problem
Existing resist compositions face challenges in achieving high sensitivity and resolution in photolithography processes, particularly with EUV lithography, due to issues such as acid diffusion, edge roughness, and the influence of shot noise, which affect the formation of precise micropatterns.
Innovation Solution
A resist composition comprising a hypervalent iodine compound and a carboxylic acid derivative is used, forming a resist film that reduces roughness and enhances resolution when processed by high-energy radiation like EB and EUV lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chemically amplified resist compositions are used to enhance sensitivity and contrast, then sensitivity and contrast are improved, but acid diffusion causes image blur and reduces resolution
Solution Approach 1:
The patent removes the chemically amplified mechanism (acid diffusion) from the resist system and uses direct EUV photochemistry. The resist composition comprises a polymer with photoacid generator groups that generate acid directly upon EUV exposure, eliminating the need for separate acid diffusion processes and enabling atomic-level precision patterning
Solution Approach 2:
The patent changes the fundamental mechanism from chemical amplification to direct photochemical reaction. By using a polymer with specific photoacid generator groups (formula 1) that decompose upon EUV exposure to generate acid in-situ, the system achieves high resolution without acid diffusion blur while maintaining sensitivity
2Manufacturing precision
If post-exposure bake temperature and time are reduced to minimize acid diffusion, then resolution is improved, but sensitivity and contrast are drastically reduced
Solution Approach 1:
The patent eliminates the need for post-exposure bake by using direct EUV photochemistry. The photoacid generator groups (formula 1) decompose directly upon EUV exposure to generate acid in-situ, removing the thermal step that caused acid diffusion while maintaining the chemical reaction necessary for patterning
Solution Approach 2:
The patent replaces the thermal mechanism (heat-driven acid diffusion during PEB) with a direct photochemical mechanism. The photoacid generator groups undergo photodissociation upon EUV exposure, generating acid directly at the exposed regions without requiring thermal energy, thus eliminating the trade-off between temperature reduction and sensitivity loss
3Manufacturing precision
If negative resist materials like HSQ are used to avoid acid diffusion and reduce edge roughness, then resolution is improved, but sensitivity is insufficient
Solution Approach 1:
The patent uses a composite resist system combining a polymer base material with incorporated photoacid generator groups (formula 1). This composite structure provides both the high resolution benefits of non-chemically amplified materials and the sensitivity enhancement through direct photochemical reaction, achieving atomic-level precision patterning
Solution Approach 2:
The photoacid generator groups (formula 1) act as intermediaries that convert EUV photon energy directly into chemical reaction (acid generation) at the molecular level. This intermediary mechanism enables high sensitivity without requiring bulk acid diffusion, achieving both high resolution and high sensitivity simultaneously
4Manufacturing precision
If EUV lithography is used to reduce pattern feature size, then resolution is improved, but shot noise increases and affects pattern formation
Solution Approach 1:
The patent changes the photochemical parameters by using a polymer with high photoacid generator group density (formula 1). This high density ensures sufficient photochemical reaction even under low photon flux EUV exposure, reducing shot noise effects while maintaining atomic-level resolution
Solution Approach 2:
The patent uses a polymer structure where photoacid generator groups are distributed throughout the material, creating numerous identical reaction sites. This distributed copying of the photochemical function ensures uniform pattern formation even when individual photon arrivals are stochastic, reducing shot noise effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high sensitivity and improved maximum resolution, reducing edge roughness and minimizing the impact of shot noise, making it suitable for precise micropatterning.
Implementation Method 1
A resist composition comprising a hypervalent iodine compound and a carboxylic acid derivative is used, forming a resist film that reduces roughness and enhances resolution when processed by high-energy radiation like EB and EUV lithography
Implementation Method 2
It is a positive resist material which increases solubility in organic solvent developer through the mechanism that the molecular weight becomes lower as a result of scission of the main chain upon EUV exposure
Data Source
AI summary
A resist composition comprising a hypervalent iodine compound, a carboxylic acid derivative, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and improved maximum resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and improved maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.