EUV Resist Semi-Solid Film LWR Reduction

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Solution Overview

Problem

Current substrate processing methods for semiconductor devices face challenges in achieving both improved line width roughness (LWR) and productivity, particularly in forming finer resist patterns during the exposure process.

Innovation Solution

A substrate processing method involving the formation of a semi-solidified film by volatilizing the solvent from a resist coating film without heating, followed by exposure to EUV light and subsequent development, which allows for uniform solubility and reduced line width roughness, and eliminates the need for a heating source, thereby simplifying the process and saving energy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a resist coating film is solidified by heating (PAB) before exposure, then the film structure is stabilized, but the manufacturing precision (LWR) deteriorates and energy consumption increases

Engineering Contradiction:
Improvefilm structure stabilityVSAvoidline width roughness
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the physical state parameter of the resist coating film from fully solidified (by heating) to semi-solidified state. By controlling the solvent removal process without applying heat, the film maintains a semi-solidified state that allows uniform EUV light penetration and consistent developer solubility, thereby reducing LWR while eliminating the need for heating equipment and reducing energy consumption.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If a resist coating film is solidified by heating before exposure, then the film structure is stabilized, but the energy consumption and process complexity increase

Engineering Contradiction:
Improvefilm structure stabilityVSAvoidenergy consumption
Core Design Contradiction:
ReliabilityVSUse of energy by stationary object

Solution Approach 1:

The patent extracts the heating step from the traditional resist processing sequence. By removing the PAB heating process and relying solely on solvent volatilization to achieve film stabilization, the method eliminates energy consumption associated with heating equipment while maintaining sufficient film structure stability for high-precision patterning.

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If a resist coating film is solidified by heating before exposure, then the film structure is stabilized, but the processing time increases

Engineering Contradiction:
Improvefilm structure stabilityVSAvoidprocessing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent performs solvent volatilization and film stabilization as a preliminary action during the coating process itself, rather than requiring a separate post-coating heating step. The resist coating film is formed and simultaneously stabilized through controlled solvent removal, allowing the film to be ready for exposure without additional processing time.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method achieves improved LWR and increased productivity by ensuring uniform EUV light exposure and solubility, allowing for finer line widths with reduced energy consumption and processing time.

Implementation Method 1

forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating

Methodology Applied
Scientific EffectVolatilization: Evaporation

Implementation Method 2

irradiating the semi-solidified film with EUV light to expose the semi-solidified film

Methodology Applied
Scientific EffectEUV light absorption: Absorption (EM radiation)

Data Source

PatentUS11604415B2Substrate processing method, substrate processing apparatus, and computer readable recording medium
Publication Date: 2023.03.14 TOKYO ELECTRON LTD
  • US11604415B2 patent drawing
  • US11604415B2 patent drawing
  • US11604415B2 patent drawing

AI summary

A substrate processing method includes: forming a coating film on a substrate by supplying a resist liquid which is photosensitive to extreme ultraviolet (EUV) light to a surface of the substrate; forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating the solvent; irradiating the semi-solidified film with EUV light thereby exposing the semi-solidified film with EUV light; and supplying a developer to the substrate after the exposure of the semi-solidified film.