EUV Resist Sensitivity Reduction via CD Slimming and Vapor Smoothing
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Solution Overview
Problem
In EUV lithography, there is a challenge in simultaneously improving resolution, line width roughness, and sensitivity, as conventional techniques often result in a tradeoff between these parameters, and EUV resist sensitivity is particularly difficult to reduce without impacting critical dimension and line width roughness.
Innovation Solution
A method involving the formation of a radiation-sensitive material layer on a substrate, followed by a EUV lithographic process, a critical dimension slimming process to reduce the critical dimension, and an optional vapor smoothing process to reduce roughness, while reducing EUV resist sensitivity by adjusting the EUV energy exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV lithography is used to achieve high resolution, then critical dimension is improved, but resist sensitivity becomes too high causing loss of control
Solution Approach 1:
The patent applies parameter changes by modifying the resist formulation (changing chemical composition, adding sensitizers or filters) and adjusting exposure parameters (EUV dose, wavelength) to reduce resist sensitivity while maintaining the ability to achieve the required critical dimension resolution. This allows high-resolution patterning without excessive sensitivity that would cause loss of control.
2Productivity
If resist sensitivity is reduced to improve throughput, then productivity is improved, but critical dimension and line width roughness may deteriorate
Solution Approach 1:
The patent modifies resist parameters (chemical composition, sensitivity characteristics) to create a formulation that maintains high throughput capability while preserving manufacturing precision. This involves finding an optimal balance point where reduced sensitivity enables higher productivity without sacrificing critical dimension control or line width roughness.
Solution Approach 2:
The patent employs composite material strategies by formulating resist compositions that combine multiple chemicals with different properties - including sensitizers, filters, and base resist materials - to achieve the desired balance between sensitivity reduction and precision maintenance. This composite approach allows simultaneous optimization of throughput and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for significant reduction in EUV resist sensitivity without affecting critical dimension and line width roughness, enabling higher throughput in EUV lithography, achieving target critical dimensions and roughness values necessary for high-volume manufacturing.
Implementation Method 1
the formation of a pattern in the layer of radiation-sensitive material using photo-lithography
Implementation Method 2
performing a CD slimming process to reduce the CD to a reduced CD
Implementation Method 3
performing an optional vapor smoothing process to reduce the roughness to a reduced roughness
Data Source
AI summary
A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.