EUV Resist Underlayer Deposition for Adhesion and Etch Resistance
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Solution Overview
Problem
In EUV lithography, the integrity of the EUV resist pattern is poor due to low etch resistance, and the adhesion between the resist underlayer and the EUV photoresist is inadequate, leading to issues like pattern collapse and line edge roughness.
Innovation Solution
A method involving the use of pulsed RF power to generate a plasma for depositing a resist underlayer on a substrate, followed by forming a patterned chemically amplified photoresist (CAR) over the underlayer, to improve adhesion and etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a resist underlayer is deposited to improve etch resistance, then etch resistance improves, but the adhesion between the resist underlayer and EUV photoresist becomes inadequate
Solution Approach 1:
The patent changes the deposition parameters by using pulsed RF power instead of continuous RF power, and optimizes process conditions such as pressure, temperature, and gas composition to simultaneously achieve high etch resistance and good adhesion between the resist underlayer and EUV photoresist
Solution Approach 2:
The patent employs composite material structures including the resist underlayer combined with EUV photoresist, and uses composite gas mixtures (e.g., silane-based precursors with oxygen or nitrogen) to create materials with optimized properties that satisfy both etch resistance and adhesion requirements
2Manufacturing precision
If the resist underlayer is made thinner to improve resolution, then resolution improves, but pattern collapse increases
Solution Approach 1:
The patent optimizes deposition parameters including pulsed RF power conditions, pressure, and temperature to create thinner resist underlayers with enhanced mechanical strength and structural integrity, preventing pattern collapse while maintaining desired resolution
Solution Approach 2:
The patent creates resist underlayers with locally optimized properties, including controlled porosity gradients and compositional variations, to provide mechanical support where needed while maintaining thin overall thickness for high resolution
3Productivity
If conventional continuous RF power is used for deposition, then deposition efficiency is maintained, but adhesion between layers is inadequate
Solution Approach 1:
The patent employs pulsed RF power with specific duty cycles and pulse widths to create periodic deposition conditions that enhance interfacial adhesion between layers while maintaining overall deposition efficiency through optimized pulse parameters
Solution Approach 2:
The patent introduces dynamic control of deposition parameters including pulsed RF power, variable pressure, and temperature modulation to optimize both adhesion and deposition efficiency throughout the deposition process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the adhesion between the resist underlayer and the EUV photoresist, reduces pattern collapse, and improves etch resistance, enabling thinner resist underlayers and better resolution in EUV lithography.
Implementation Method 1
applying a pulsed RF power to the precursor gas mixture to generate a plasma in the processing region
Implementation Method 2
depositing a resist underlayer on the substrate with the plasma generated from the pulsed RF power
Data Source
AI summary
The present disclosure generally relates to semiconductor processing and, in particular, provides methods of forming a resist underlayer on a substrate for use in EUV lithography processing. In an embodiment, the method includes flowing a precursor gas mixture into the processing region of the process chamber, applying a pulsed RF power to the precursor gas mixture to generate a plasma in the processing region, depositing a resist underlayer on the substrate with the plasma generated from the pulsed RF power, and forming a patterned chemically amplified photoresist (CAR) over the resist underlayer.