EUV Resist Underlayer Composition for LWR Control
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Solution Overview
Problem
In EUV lithography, forming thin resist underlayer films with uniformity and preventing defects such as pinholes and agglomerations on semiconductor substrates is challenging due to substrate influences, and there is a need for improved adhesion and reduced Line Width Roughness (LWR) in resist patterns.
Innovation Solution
An EUV resist underlayer film-forming composition comprising an organic solvent and a polymer with specific terminal structures, including reactive groups, is used to form a thin film that enhances adhesion and sensitivity, and includes a crosslinking catalyst or agent to improve film properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin resist underlayer film is formed for EUV exposure, then the line width of the resist pattern can be reduced to 32 nm or less, but pinholes and agglomerations easily occur due to substrate surface influences and polymer effects, making it difficult to form a uniform film without defects
Solution Approach 1:
The patent changes the chemical parameters of the polymer by introducing specific terminal structures (formula 1) with reactive groups and controlling the polymer composition (formula 2 units). This modifies the film-forming properties to reduce pinholes and agglomerations while maintaining thin film thickness for EUV exposure with 32 nm or less line width.
Solution Approach 2:
The patent creates a composite polymer structure combining specific terminal groups (formula 1) with repeating units (formula 2) containing reactive groups. This composite structure integrates multiple functions: adhesion promotion through terminal groups and crosslinking capability through side chain reactive groups, resulting in uniform thin films suitable for EUV lithography.
2Ease of manufacture
If a solvent-based development method is used to remove unexposed resist film, then the resist pattern can be formed, but the adhesion of the resist pattern deteriorates
Solution Approach 1:
The patent applies preliminary action by incorporating adhesion-promoting terminal structures (formula 1) and crosslinking agents into the resist composition before development. The terminal groups with specific chemical structures prepare the surface for better adhesion, and crosslinking occurs prior to development to strengthen the resist pattern, preventing adhesion deterioration during solvent-based development.
Solution Approach 2:
The patent changes the chemical parameters of the resist composition by introducing specific terminal structures and crosslinking mechanisms. This modifies the resist properties to maintain strong adhesion even when using solvent-based development methods, while still enabling effective removal of unexposed resist film.
3Ease of manufacture
If conventional resist underlayer materials are used, then the film can be formed, but the Line Width Roughness (LWR) deteriorates and resist sensitivity decreases
Solution Approach 1:
The patent changes the chemical parameters of the polymer by introducing specific terminal structures (formula 1) and controlling the repeating unit composition (formula 2). This optimization of molecular structure parameters reduces LWR and improves resist sensitivity while maintaining ease of film formation through appropriate solvent selection and processing conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively suppresses LWR and improves resist pattern sensitivity, ensuring uniformity and reducing defects in the resist pattern, enabling the formation of desired patterns with better rectangular shapes.
Implementation Method 1
enhances adhesion and sensitivity
Implementation Method 2
includes a crosslinking catalyst or agent to improve film properties
Implementation Method 3
suppresses LWR and improves resist pattern sensitivity, ensuring uniformity and reducing defects
Data Source
AI summary
A composition for forming a resist underlayer film that enables the formation of a desired resist pattern, a method for manufacturing a resist pattern using the composition for forming a resist underlayer film and a method for manufacturing a semiconductor device. This composition for forming an EUV resist underlayer film includes a polymer that contains a structure represented by formula (1) at an end [in formula (1): X1 represents —O—, —S—, an ester bond or an amide bond; R1 represents an optionally halogenated alkyl group having 1-20 carbon atoms; and * represents a binding portion to the polymer end] and an organic solvent.