EUV Reticle Plasma Cleaning System
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Solution Overview
Problem
Existing mask-cleaning techniques for EUV lithographic templates are inadequate as they can cause structural defects and oxidation of the ruthenium capping layer, leading to degradation of the lithographically transferred patterns due to contamination and physical forces.
Innovation Solution
A method involving a dual pod carrier with a conductive inner baseplate and cover to generate a plasma using a source gas, which effectively removes particles from the EUV reticle surface without causing structural damage or oxidation, utilizing a hydrogen or hydrogen-inert gas plasma to clean the surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wet chemical processes with physical force are used to clean the EUV lithographic template, then particle removal is achieved, but structural mask defects and oxidation of the ruthenium capping layer occur
Solution Approach 1:
The patent replaces wet chemical processes and physical force mechanisms with a plasma-based cleaning system. The plasma, generated by applying a potential between conductive components in a controlled atmosphere, removes particles through chemical and physical interactions without the mechanical and chemical damage caused by traditional methods.
Solution Approach 2:
The patent employs an inert or controlled atmosphere during the plasma cleaning process to prevent oxidation of the ruthenium capping layer. By controlling the atmospheric composition and using plasma chemistry, the cleaning process removes particles while maintaining the integrity and oxidation state of the mask surface.
2Manufacturing precision
If existing mask-cleaning techniques are used, then some particle contamination is removed, but degradation of the lithographically transferred pattern quality occurs
Solution Approach 1:
The patent substitutes traditional mechanical and chemical cleaning methods with a plasma-based system that provides superior particle removal while preserving pattern quality. The plasma process achieves cleaner surfaces without the damage that leads to pattern degradation.
Solution Approach 2:
The patent changes the fundamental parameters of the cleaning process by using plasma generation through electrical potential in a controlled atmosphere, rather than traditional chemical and mechanical parameters. This enables effective particle removal while maintaining the structural and chemical integrity of the mask surface and deposited patterns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method preserves the ruthenium surface by preventing oxidation and structural damage, maintaining the quality of the lithographically transferred patterns while effectively removing contaminants, thus enhancing the EUV lithographic process.
Implementation Method 1
generating a plasma within the carrier using the source gas. Particles are then removed from a surface of the reticle using the generated plasma
Data Source
AI summary
A method of removing particles from a surface of a reticle is disclosed. The reticle is placed in a carrier, a source gas is flowed into the carrier, and a plasma is generated within the carrier. Particles are then removed from a surface of the reticle using the generated plasma. A system of removing particles from a surface includes a carrier configured to house a reticle, a reticle stocker including the carrier, a power supply configured to apply a potential between an inner cover and an inner baseplate of the carrier, and a gas source configured to flow a gas into the carrier. A plasma may be generated within the carrier, and particles can be removed from a surface of the reticle using the generated plasma. An acoustic energy source configured to agitate at least one of the source gas and the generated plasma may be provided to facilitate particle removal using an agitated plasma.