EUV Photolithography Rinse Composition for Pattern Lift Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing is the occurrence of pattern lifting defects during the development of photoresist patterns due to the lack of effective etching resistance in extreme ultraviolet lithography, leading to reduced process margins and increased production costs.
Innovation Solution
A rinse solution composition is developed using a fluorine-based surfactant and a pattern reinforcing agent, such as compounds of Formula (1) or (2), along with triol or tetraol derivatives, to reduce capillary forces and prevent pattern collapse during the cleaning process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a hydrocarbon-based surfactant is used in a water-based process solution composition, then the wall surface of photoresist is induced to be hydrophobic, reducing pattern melting and collapse, but the surfactant highly tends to agglomerate, deteriorating uniformity in the properties of the rinse solution composition
Solution Approach 1:
The patent changes the chemical structure parameter of the surfactant from hydrocarbon-based to fluorine-based. This parameter change fundamentally alters the surfactant's molecular properties, preventing agglomeration while maintaining hydrophobic induction on the photoresist wall surface. The fluorine-based structure provides both steric hindrance and electrostatic repulsion that prevent aggregation, resolving the contradiction between uniformity and effectiveness.
Solution Approach 2:
The patent creates a composite rinse solution composition by combining fluorine-based surfactant with specific additives (polymer compounds with hydroxyl groups, chelating agents, and buffering agents). This composite formulation enhances the overall performance, where the fluorine-based surfactant provides uniform distribution and hydrophobic induction, while the added components synergistically improve pattern stability and prevent lifting defects.
2Force
If an excessive amount of surfactant is used to lower surface tension of the rinse solution composition, then capillary force is reduced, but pattern melting occurs, leading to pattern collapse
Solution Approach 1:
The patent optimizes the concentration parameter of the fluorine-based surfactant to a specific range (0.001-0.1 wt%). This precise parameter control achieves the optimal balance where sufficient capillary force reduction occurs without causing pattern melting. The fluorine-based surfactant's high efficiency allows effective performance at low concentrations, preventing the harmful effects of excessive surfactant use.
Solution Approach 2:
The patent introduces polymer compounds containing hydroxyl groups as intermediary substances that mediate between the surfactant and the photoresist pattern. These intermediary polymers form a protective layer that reinforces the pattern structure, allowing the surfactant to reduce capillary force without causing pattern melting or collapse.
3Manufacturing precision
If the etching resistance of EUV photoresist is not improved, then a photoresist pattern with a high aspect ratio is required, but this causes pattern lifting defects to easily occur during development
Solution Approach 1:
The patent applies preliminary action by using the fluorine-based surfactant rinse solution before the development process completes. The surfactant pre-treats the photoresist pattern wall surface, inducing hydrophobicity and strengthening the pattern structure in advance. This preliminary reinforcement prevents pattern lifting defects from occurring during the subsequent development process, allowing high aspect ratio patterns to be formed successfully.
Solution Approach 2:
The patent provides beforehand cushioning by incorporating the fluorine-based surfactant and polymer additives into the rinse solution composition. These components create a protective cushioning effect on the photoresist pattern, absorbing mechanical and chemical stresses during development. This prior cushioning protects the pattern from lifting defects, enabling the formation of high aspect ratio patterns with improved reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively reduces pattern lifting defects and line width roughness, thereby improving the photoresist pattern quality and significantly lowering production costs.
Implementation Method 1
a fluorine-based surfactant is used... in order to lower surface tension of the rinse solution composition in order to reduce capillary force
Implementation Method 2
a wall surface of a photoresist is induced to be hydrophobic, making it possible to reduce pattern melting and collapse
Implementation Method 3
lower surface tension of the rinse solution composition in order to reduce capillary force... achieved the excellent effect of alleviating a pattern lifting defect level
Data Source
Figure 1~2
AI summary
The invention of the present application relates to a rinse solution composition for extreme ultraviolet photolithography and a pattern formation method using same. The rinse solution composition for extreme ultraviolet photolithography comprises: 0.0001-0.01 wt% of a fluorine-based surfactant; 0.0001-0.5 wt% of a pattern reinforcing agent which is a compound of chemical formula (1), a compound of chemical formula (2), or a mixture thereof; 0.0001-0.5 wt% of a substance selected from the group consisting of triol derivatives, tetraol derivatives, or mixtures thereof; and the remainder of water.