EUV Source 3D Diagnostics for Plasma Tuning and Contamination Control
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Solution Overview
Problem
Existing EUV lithography techniques face challenges in achieving high-resolution lithography processes due to inefficiencies in monitoring and controlling the EUV radiation source, plasma generation, and contamination, which affect the quality and efficiency of IC fabrication.
Innovation Solution
An EUV control system integrated with 3D diagnostics modules to monitor and analyze laser beam, plasma, and EUV radiation, enabling real-time data collection and correlation analysis to identify root causes and actively tune the lithography apparatus for enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV lithography is used to achieve higher resolution, then manufacturing precision is improved, but device complexity increases due to the need for reflective optics and plasma source control
Solution Approach 1:
The patent implements real-time monitoring of plasma conditions, EUV radiation characteristics, and optical system performance using various sensors and diagnostics. This feedback is used to dynamically adjust plasma generation parameters, mirror positioning, and other system variables to maintain optimal lithography performance while managing the inherent complexity of the EUV system
Solution Approach 2:
The patent replaces traditional refractive lenses with reflective optics (mirrors) to handle EUV radiation, as EUV light cannot pass through conventional lenses. This substitution enables high-resolution lithography but introduces additional complexity in aligning and controlling the reflective optical paths
2Reliability
If real-time monitoring and control systems are added to improve process stability, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent integrates multiple sensors that continuously monitor plasma parameters (temperature, density, composition), EUV radiation intensity and spectrum, and optical system alignment. This real-time feedback enables automatic adjustment of plasma generation conditions and optical parameters to maintain process stability and reliability
Solution Approach 2:
The control system automatically detects and corrects process deviations without external intervention, using embedded sensors and actuators to self-regulate plasma conditions and optical alignment, thereby improving reliability while managing complexity through automation
3Manufacturing precision
If 3D plasma diagnostics are implemented to improve process control, then manufacturing precision is improved, but measurement precision requirements increase
Solution Approach 1:
The patent transitions from traditional 2D plasma diagnostics to 3D plasma diagnostics, adding spatial dimensionality to the measurement capability. This enables comprehensive characterization of plasma density, temperature, and composition distributions throughout the plasma volume, improving process control accuracy for EUV lithography
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system improves the accuracy and efficiency of EUV lithography processes by reducing contamination and stabilizing plasma conditions, leading to higher quality IC fabrication with reduced downtime and costs.
Implementation Method 1
a laser source 20, a target material droplet generator 68 and an EUV collector 66 configured in a vessel 14 to generate EUV radiation 18 through a laser produced plasma (LPP) process
Implementation Method 2
the target material droplet generator 68 and an EUV collector 66 configured in a vessel 14 to generate EUV radiation 18 through a laser produced plasma (LPP) process
Data Source
AI summary
The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.