EUV Surface-Termination Patterning for Sub-20 Nm Features
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Solution Overview
Problem
The limited resolution of photolithography tools and the inability to achieve robust resist for defining small features in a single exposure pose challenges in the fabrication of semiconductor devices with critical dimensions below 20 nm.
Innovation Solution
A method involving EUV radiation exposure of a thin film with a SiARC film surface in an O2/H2 environment, followed by selective deposition of a hard mask on the exposed areas, to form patterns on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional photolithography is used for fabricating semiconductor devices, then the fabrication process is simpler, but the resolution is insufficient for critical dimensions below 20 nm
Solution Approach 1:
The invention changes the surface termination parameter of the SiARC film from hydrophobic to hydrophilic through EUV radiation exposure in an O2/H2 environment. This parameter change enables selective hard mask deposition on exposed areas, achieving high-resolution patterning for critical dimensions below 20 nm while maintaining a relatively simple single-exposure fabrication process
2Manufacturing precision
If multiple lithography steps are used to achieve smaller dimensions, then the resolution is improved, but the fabrication time and process complexity increase
Solution Approach 1:
The invention performs preliminary action by modifying the surface termination of the SiARC film through EUV radiation exposure before hard mask deposition. This preliminary surface modification creates distinct hydrophilic/hydrophobic regions that enable selective mask deposition in a single exposure step, eliminating the need for multiple lithography steps and reducing fabrication time
3Productivity
If a single exposure is used to define small features, then the fabrication time is reduced, but the ability to achieve robust resist patterning is insufficient
Solution Approach 1:
The invention changes the surface chemistry parameter of the SiARC film by altering surface termination from hydrophobic to hydrophilic through EUV radiation. This parameter change enables the film to serve as a robust resist for single-exposure patterning, achieving both high productivity and precise feature definition for critical dimensions below 20 nm
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively forms patterns on the substrate by altering the surface termination of the SiARC film from hydrophobic to hydrophilic, enabling the creation of small features in a single exposure, thus overcoming the limitations of traditional lithography techniques.
Implementation Method 1
exposing the substrate to EUV radiation while exposing the patternable layer to a reactive gas, thereby forming a pattern on the patternable layer
Data Source
AI summary
A method for forming a pattern on a substrate disclosed. The method comprising, providing an Extreme Ultraviolet (EUV) lithography system having an exposure chamber, providing a substrate to the exposure chamber, the substrate comprising a patternable layer, the patternable layer comprising a photosensitive surface termination; and exposing the substrate to EUV radiation while exposing the patternable layer to a reactive gas, thereby forming a pattern on the patternable layer, comprising exposed areas and unexposed areas, the unexposed areas comprising the photosensitive surface termination and the exposed areas comprising an altered surface termination.