EUV Photoresist Underlayer for Adhesion and Dose Reduction
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Solution Overview
Problem
Current EUV photoresist technologies face challenges such as delamination between EUV inorganic PR and hardmask materials, poor etch resistance, and high radiation doses required for effective patterning, which affect line edge and line width roughness.
Innovation Solution
A thin underlayer film, composed of hydronated carbon doped with elements like O, Si, N, W, B, or I, is deposited between the substrate and EUV-sensitive inorganic photoresist to enhance adhesion and reduce radiation dose, using methods like PECVD or ALD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thin underlayer film of hydronated carbon doped with O, Si, N, W, B, or I is deposited between the substrate and EUV photoresist, then adhesion between the substrate and imaging layer is improved and radiation dose is reduced, but the process complexity and manufacturing steps increase
Solution Approach 1:
A thin underlayer film composed of hydronated carbon doped with elements such as O, Si, N, W, B, or I is deposited between the substrate and the EUV photoresist. This intermediary layer serves as a mediator that improves adhesion between the substrate and imaging layer while reducing the radiation dose required for effective patterning.
Solution Approach 2:
The underlayer is formed as a composite material combining hydronated carbon with dopant elements (O, Si, N, W, B, or I). This composite structure provides enhanced adhesion properties and optimized radiation absorption characteristics, achieving both improved reliability and reduced dose requirements.
2Device complexity
If EUV inorganic photoresist is used directly on hardmask materials, then the process is simpler, but delamination occurs and etch resistance is poor
Solution Approach 1:
The underlayer film acts as an intermediary between the hardmask substrate and the EUV photoresist, preventing direct contact that leads to delamination. This intermediate layer provides both adhesion promotion and etch resistance, eliminating the failures associated with direct deposition.
Solution Approach 2:
The underlayer is deposited in advance before applying the EUV photoresist, preparing the substrate surface with optimal adhesion and etch resistance properties. This preliminary action prevents delamination and enhances etch resistance before the photoresist is exposed to radiation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The underlayer improves etch selectivity, reduces line edge and line width roughness, and decreases the required radiation dose, enhancing the performance of EUV lithography processes.
Implementation Method 1
reduce a radiation dose for effective photoresist exposure of the imaging layer
Implementation Method 2
oxygen atoms configured to form oxygen bonds to an atom in the imaging layer
Data Source
AI summary
This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.