EUV Photoresist Underlayer with PAG for High Aspect Ratio Patterning
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Solution Overview
Problem
Current semiconductor manufacturing methods face challenges in forming fine patterns with high resolution and sensitivity, particularly due to limitations in light sources and the need for additional processes like anti-reflection coatings, which complicate the formation of high aspect ratio patterns.
Innovation Solution
A method involving the formation of an underlayer using a silicon compound combined with a photoacid generator (PAG) by chemical vapor deposition (CVD), which includes a cross-linking agent and adhesion reinforcing agent, allows for the use of extreme ultraviolet (EUV) light to generate acid and create a photoresist pattern, enabling anisotropic etching and reducing the need for hard mask layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional light sources are used for forming fine patterns, then the manufacturing process is simpler, but the pattern resolution and sensitivity deteriorate
Solution Approach 1:
An underlayer comprising a silicon polymer and a photoacid generator (PAG) is introduced as an intermediary between the photoresist layer and the etching target layer. This underlayer absorbs EUV light and generates acid, which diffuses to the photoresist layer to enhance pattern formation. This mediator enables high-resolution patterning with EUV light while simplifying the overall process by eliminating the need for separate anti-reflection coating layers.
Solution Approach 2:
The underlayer is formed as a composite material combining a silicon polymer and a photoacid generator (PAG). The silicon polymer provides structural foundation and etch selectivity, while the PAG generates acid upon EUV irradiation. This composite structure achieves both high pattern resolution and process simplification by integrating multiple functions into a single layer.
2Manufacturing precision
If anti-reflection coating layers are added to improve pattern formation, then the pattern quality improves, but the device complexity and number of processes increase
Solution Approach 1:
The underlayer combines multiple functions into a single layer: it serves as an anti-reflection coating, an acid generator, and an etch mask. By merging these functions that would traditionally require separate layers into one integrated underlayer, the patent reduces the number of manufacturing processes while maintaining high pattern quality.
Solution Approach 2:
The underlayer performs multiple functions simultaneously: it absorbs EUV light to generate acid, provides etch selectivity as a mask layer, and prevents reflection issues. This multi-functional design eliminates the need for separate anti-reflection coating layers and other auxiliary layers, reducing process complexity.
3Manufacturing precision
If hard mask layers are used to form high aspect ratio patterns, then the etch selectivity improves, but the device complexity increases
Solution Approach 1:
The underlayer acts as an intermediary etch mask between the photoresist layer and the etching target layer. It provides the necessary etch selectivity for forming high aspect ratio patterns without requiring additional hard mask layers. The silicon polymer in the underlayer offers favorable etch selectivity, simplifying the structure while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves pattern resolution and sensitivity, simplifies the process by minimizing the use of hard mask layers, and enhances etch selectivity, facilitating the formation of fine patterns with high aspect ratios in semiconductor devices.
Implementation Method 1
irradiating extreme ultraviolet (EUV) light onto the photoresist layer such that an acid generated from the PAG migrates to the photoresist layer
Implementation Method 2
forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process
Data Source
AI summary
A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.