Photolithography Underlayer Compound for EUV Resist Resolution

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Solution Overview

Problem

Current photolithography techniques face challenges in achieving high resolution and sensitivity for miniaturized semiconductor patterns while preventing resist pattern collapse and improving etching resistance.

Innovation Solution

An underlayer compound comprising an alternating copolymer with specific repeating units or alkylated tin oxide nanoclusters with a counter anion is used, which forms a multilayer structure to enhance photoresist layer resolution, sensitivity, and etching resistance, and is applied in extreme ultraviolet lithography processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional photolithography techniques are used for miniaturized patterns, then manufacturing complexity is reduced, but resolution and sensitivity deteriorate

Engineering Contradiction:

ImproveresolutionVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

An underlayer compound is introduced as an intermediary between the substrate and the photoresist layer. This underlayer includes specific repeating units with iodine or tin atoms that mediate the interaction between light and the photoresist, improving resolution and sensitivity without requiring complex equipment changes

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The underlayer compound uses composite material structure with alternating copolymer repeating units containing heavy atoms (iodine or tin) combined with specific functional groups. This composite structure enhances light absorption and electron generation, improving photolithography performance

Inventive Principle:

Principle #40Composite materials

2Productivity

If photoresist layer is miniaturized for high integration, then productivity is improved, but pattern collapse increases

Engineering Contradiction:

Improveintegration densityVSAvoidpattern stability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The underlayer compound changes the physical and chemical parameters at the interface between substrate and photoresist. By incorporating heavy atoms and specific functional groups, it modifies surface energy, adhesion properties, and electron generation, thereby preventing pattern collapse in miniaturized structures

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The underlayer provides localized quality improvement at the critical interface region where photoresist contacts the substrate. The repeating units with heavy atoms are positioned specifically to enhance local electron generation and adhesion, providing targeted support to prevent pattern collapse

Inventive Principle:

Principle #3Local quality

3Reliability

If conventional underlayer materials are used, then ease of manufacture is maintained, but etching resistance deteriorates

Engineering Contradiction:

Improveetching resistanceVSAvoidmaterial simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The underlayer compound employs composite material design with alternating copolymer repeating units that combine heavy atoms (for etching resistance) with specific functional groups. This composite structure provides superior etching resistance while maintaining manufacturability through solution processing

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The invention changes the chemical composition parameters of the underlayer by incorporating iodine or tin atoms in specific repeating units. This parameter change enhances etching resistance by creating a more robust interface layer that withstands etching processes

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The underlayer compound improves the resolution and sensitivity of photoresist layers, reduces pattern collapse, and enhances etching resistance, enabling more precise and reliable semiconductor device manufacturing.

Implementation Method 1

The underlayer compound includes an alternating copolymer including a repeating unit represented by Formula 1, or an alkylated tin oxide nanocluster having a counter anion... improves the resolution and sensitivity of photoresist layers

Methodology Applied

Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Data Source

PatentUS20230375927A1Underlayer compound for photolithography, multilayered structure formed using the same, and method for manufacturing semiconductor devices using the same

Publication Date: 2023.11.23 INHA UNIV RES & BUSINESS FOUNDATION

AI summary

Provided is an underlayer compound, which improves the resolution and sensitivity of a photoresist layer, restrains the collapse of a photoresist pattern and has improved etching resistance. The underlayer compound includes an alternating copolymer including a repeating unit represented by Formula 1, or an alkylated tin oxide nanocluster having a counter anion.