EUV Source Vane Heating Sequence for Byproduct Removal
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Solution Overview
Problem
The manufacturing of semiconductor devices with increasingly smaller dimensions faces challenges due to the limitations of traditional photolithography equipment, as the spacing between elements is less than the pitch that can be manufactured using optical masks and photolithography, approaching the theoretical limits of photolithography equipment.
Innovation Solution
A cleaning process is performed to remove plasma generation byproducts from the vanes of a lithography system by pre-heating the lower portions of the vanes to reduce the temperature difference between upper and lower portions, allowing for uniform heating and melting of the byproducts, which are then evacuated to prevent re-solidification and damage to components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional photolithography equipment is used for manufacturing semiconductor devices with increasingly smaller dimensions, then manufacturing capability is improved, but the spacing between elements cannot be reduced further due to reaching theoretical limits
Solution Approach 1:
The patent changes the fundamental parameter of the lithography process by transitioning from optical photolithography to electron beam lithography. This parameter change enables spacing between elements to be reduced below the theoretical limits of optical photolithography, achieving the desired manufacturing precision for next-generation semiconductor devices.
2Reliability
If plasma generation byproducts are not cleaned from vanes, then system operation is maintained, but byproducts re-solidify and damage components
Solution Approach 1:
The patent applies preliminary action by pre-heating the lower portions of the vanes before the cleaning process. This preliminary heating reduces the temperature difference between upper and lower portions, ensuring uniform melting of byproducts and preventing re-solidification damage during the cleaning operation, thereby maintaining system reliability.
Solution Approach 2:
The patent utilizes phase transitions by heating the vanes to melt the plasma generation byproducts from solid to liquid state, enabling their evacuation. The controlled phase transition prevents re-solidification by maintaining temperatures above the melting point during the cleaning process, eliminating harmful damage to components.
3Ease of manufacture
If uniform heating is not applied to vanes, then cleaning process is simplified, but temperature difference causes byproduct re-solidification risk
Solution Approach 1:
The patent applies preliminary action by pre-heating the lower portions of the vanes before the main cleaning process. This preliminary step reduces the temperature difference between upper and lower portions, enabling more uniform heating during the cleaning process and preventing byproduct re-solidification, thus maintaining reliability while keeping the process manageable.
Solution Approach 2:
The patent applies local quality by differentiating the heating approach: pre-heating the lower portions of the vanes separately before applying uniform heating during the cleaning process. This localized preliminary heating addresses the specific temperature differential issue while maintaining overall process simplicity and effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process reduces the risk of byproduct re-solidification, thereby increasing the lifespan of the EUV source and maintaining system efficiency, with improved availability and reduced maintenance time.
Implementation Method 1
pre-heating the lower portions of the vanes to reduce the temperature difference between upper and lower portions
Implementation Method 2
heating the upper and lower portions of the vanes uniformly to melt the byproducts
Implementation Method 3
evacuating the melted byproducts to prevent re-solidification and damage to components
Data Source
AI summary
In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.


