Integrated EV Inverter Gate Driver for SiC Fault Sensing

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Inverters for electric vehicles face challenges in high voltage and electrically noisy environments, which affect the operation of gate drivers and power device switches, leading to issues like distorted PWM signals and delayed fault detection due to galvanic isolation and parasitic inductance, resulting in potential damage during short circuits.

Innovation Solution

An integrated gate driver system is implemented within the power switch, using a point-of-use controller to locally sense currents and temperatures of SiC dies, providing direct current sensing and precise thermal measurement, and custom-tailored gate drive profiles based on device characteristics, reducing switching losses and stress on SiC devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If galvanic isolation is used to protect the gate driver in high voltage environments, then safety is improved, but signal distortion and delayed fault detection occur due to parasitic inductance

Engineering Contradiction:
Improvegate driver safetyVSAvoidPWM signal distortion
Core Design Contradiction:
ReliabilityVSLoss of information

Solution Approach 1:

The patent extracts the sensing function from the isolated gate driver and places it directly at the power device switch, eliminating the need for signal transmission through isolating barriers. The point-of-use controller is integrated with the power switch, allowing direct sensing of current and temperature without galvanic isolation interference, thus removing parasitic inductance effects while maintaining safety through separate monitoring channels.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces an intermediary sensing circuit that directly contacts the power device switch to measure current and temperature. This intermediary sensing mechanism bypasses the galvanic isolation barrier for measurement purposes while maintaining isolation for control signals, eliminating signal distortion caused by parasitic inductance in the isolation path.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If galvanic isolation is used to protect the gate driver, then safety is improved, but fault detection is delayed

Engineering Contradiction:
Improvegate driver safetyVSAvoidfault detection time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent implements preliminary action by continuously monitoring current and temperature at the point of use before faults develop. The integrated sensing circuit constantly measures parameters and compares them against predetermined thresholds, enabling early detection of abnormal conditions before they escalate into critical faults, thus reducing fault detection time while maintaining safety through continuous monitoring.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback by having the point-of-use controller continuously sense current and temperature, compare these values against predetermined thresholds, and immediately respond when abnormalities are detected. This closed-loop feedback mechanism eliminates the time delay associated with galvanic isolation by providing real-time monitoring and immediate fault detection through direct sensing at the power device switch.

Inventive Principle:
Principle #23Feedback

3Adaptability or versatility

If standard gate drive profiles are used, then device compatibility is improved, but switching losses and stress on SiC devices increase

Engineering Contradiction:
Improvedevice compatibilityVSAvoidswitching losses
Core Design Contradiction:
Adaptability or versatilityVSLoss of energy

Solution Approach 1:

The patent applies local quality by customizing the gate drive profile specifically for SiC power device switches based on their unique characteristics. The point-of-use controller adjusts the gate drive waveform parameters (such as rise time, fall time, and voltage levels) to match the specific electrical characteristics of the SiC devices, optimizing switching performance and minimizing switching losses while maintaining compatibility through adjustable parameters.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements dynamics by making the gate drive profile adaptive and adjustable rather than fixed. The point-of-use controller can dynamically modify gate drive parameters based on operating conditions and device characteristics, allowing optimization of switching performance for different SiC devices and operating scenarios, thereby reducing switching losses while maintaining broad device compatibility through programmable control.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS12103406B2Systems and methods for integrated gate driver for inverter for electric vehicle
Publication Date: 2024.10.01 BORGWARNER US TECHNOLOGIES LLC
  • US12103406B2 patent drawing
  • US12103406B2 patent drawing
  • US12103406B2 patent drawing

AI summary

A system includes: an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a first power module including: a first connection; a second connection; a first power switch including a first gate terminal, the first power switch configured to control a first flow of current between the first connection and the second connection based on a first signal to the first gate terminal; and a first point-of-use controller configured to provide the first signal to the first gate terminal to control the first power switch.