Super-Resolution Photoetching via Evanescent Wave Conversion
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Solution Overview
Problem
Conventional near-field optical photolithography and super lens imaging technologies face challenges in achieving contactless super-resolution imaging due to rapid decay of evanescent waves in gap spaces, leading to reduced imaging resolution and contrast, and potential damage to high-precision mask structures.
Innovation Solution
The implementation of high numerical aperture (NA) off-axis illumination and surface plasmon (SP) wave illumination modes, combined with accessory structures, to convert high-frequency evanescent wave components into low-frequency components, allowing for effective imaging through a larger gap without physical contact between the mask and substrate, thereby enhancing imaging contrast and resolving power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If contacting mode is used to achieve super-resolution imaging, then imaging resolution is improved, but mask damage increases
Solution Approach 1:
The patent introduces an evanescent wave field as an intermediary to transfer pattern information from mask to substrate without direct physical contact. The evanescent waves carry sub-wavelength spatial frequency information through the gap space, enabling super-resolution imaging while preventing mask abrasion and damage that would occur in contacting modes.
Solution Approach 2:
The patent replaces the mechanical contacting system with an optical field-based system. Instead of relying on physical contact between mask and substrate, the invention uses evanescent wave coupling to transfer pattern information, substituting mechanical interaction with electromagnetic field interaction to eliminate wear and damage.
2Duration of action of stationary object
If air distance between mask and substrate is increased to prevent contact, then mask lifecycle is extended, but imaging resolution deteriorates
Solution Approach 1:
The patent changes the working parameters of the optical system by operating in the evanescent wave regime rather than far-field optical regime. By utilizing the exponential decay characteristics of evanescent waves and matching the gap distance to the decay length, the system achieves super-resolution imaging at larger separations (tens of nanometers to micrometers) compared to conventional near-field techniques.
Solution Approach 2:
The patent transitions from near-field imaging (where resolution is limited by extremely small gap distances) to a regime where the gap dimension is effectively decoupled from resolution limits. By using evanescent waves that can propagate through larger gaps and by employing techniques like aperture coupling and phase matching, the invention extends the useful imaging distance into a new dimensional regime.
3Device complexity
If conventional optical photolithography is used, then device complexity is reduced, but resolution is limited to quarter wavelength
Solution Approach 1:
The patent exploits the phase transition from propagating waves to evanescent waves by controlling the gap distance and optical coupling conditions. In the evanescent wave regime, spatial frequency components beyond the diffraction limit can be sustained and transferred, enabling resolution beyond the conventional quarter-wavelength limit while maintaining relative system simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables contactless super-resolution imaging photolithography with improved resolution and contrast, extending the lifecycle of mask structures and reducing abrasion, while maintaining high imaging quality even at larger air distances between the mask and substrate.
Implementation Method 1
surface plasmon (SP) wave illumination mode
Implementation Method 2
a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern
Data Source
Figure 1
Figure 2
Figure 3(a)~3(b)
AI summary
Provided are apparatuses and methods for super resolution imaging photolithography. An exemplary apparatus may includean illumination light generation device configured to generate illumination light for imaging a pattern included in a mask through the mask. The illumination light may include a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern. For example, the illumination light generation device may be configured to form the illumination in accordance with a high numerical aperture (NA) illumination mode and/or a surface plasmon (SP)wave illumination mode.