Embedded Wafer Level Package 3D Stacking via Interposer

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Solution Overview

Problem

Current semiconductor packaging technologies face challenges in increasing density and reducing size while maintaining reliable connections and thermal management, particularly with issues related to thermal expansion mismatches and difficulties in forming through vias in molding compound layers.

Innovation Solution

The embedded wafer level package incorporates a redistribution layer on a support wafer with semiconductor dies and solder balls encapsulated in a molding compound, allowing for planarization and additional redistribution layers to create reliable electrical connections and a 3D stacking configuration, with the support wafer acting as an interposer for package-on-package configurations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If through vias are formed in molding compound layers to create through-connections, then electrical connections can be established through the package, but the manufacturing process becomes extremely difficult and complex

Engineering Contradiction:
Improvethrough-connection reliabilityVSAvoidvia formation difficulty
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent introduces a support wafer as an intermediary substrate that receives the semiconductor die and solder balls during packaging. This support wafer serves as a mediator that eliminates the need to form difficult through vias in the molding compound, while still enabling through-connections to be established through alternative, easier manufacturing processes on the support wafer itself

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent segments the packaging process into distinct functional layers: the support wafer substrate, the molding compound encapsulation layer, and the redistribution layers. By separating the through-connection formation function from the molding compound layer and assigning it to the support wafer, the manufacturing difficulty is significantly reduced

Inventive Principle:
Principle #1Segmentation

2Productivity

If semiconductor devices are made smaller and more dense, then more devices can be made per wafer and products can be made more compact, but thermal management becomes more challenging due to thermal expansion mismatches

Engineering Contradiction:
Improvedevices per waferVSAvoidthermal expansion mismatch
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent changes the physical parameters of the support wafer, specifically selecting materials with thermal expansion coefficients that match or are compatible with the semiconductor die. This parameter adjustment resolves the thermal expansion mismatch problem while enabling higher device density and improved thermal management

Inventive Principle:
Principle #35Parameter changes

3Area of stationary object

If fan-out wafer level packaging is used to increase area for back end processes, then contact positions can be relocated to larger footprint, but the original wafer real estate is sacrificed

Engineering Contradiction:
Improvecontact areaVSAvoidoriginal wafer area
Core Design Contradiction:
Area of stationary objectVSArea of moving object

Solution Approach 1:

The patent transitions from a 2D fan-out approach to a 3D vertical stacking approach. Multiple semiconductor dies are stacked vertically on the support wafer, with through-connections providing electrical pathways between layers. This dimensional change enables increased functionality and contact area without sacrificing horizontal wafer real estate

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables increased density and compactness of semiconductor devices with reliable thermal management, reduced thermal stress due to matching thermal expansion, and efficient through connections, while avoiding the challenges of forming through vias in molding compound layers.

Implementation Method 1

The die and solder balls are encapsulated in a molding compound layer

Methodology Applied
Scientific EffectEncapsulation: Physical Containment

Implementation Method 2

molding compound layer, which is planarized to expose top portions of the solder balls

Methodology Applied
Scientific EffectPlanarization: Abrasion

Implementation Method 3

solder balls are also positioned on the redistribution layer in contact with electrical traces thereof

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 4

The support wafer can act as an interposer layer for a package-on-package configuration, in which case the support wafer includes TSVs in electrical contact with the first redistribution layer on one side of the support wafer and an additional redistribution layer on the opposite side of the support substrate

Methodology Applied
Scientific EffectElectrical routing: Conduction (electrical)

Data Source

PatentUS8779601B2Embedded wafer level package for 3D and package-on-package applications, and method of manufacture
Publication Date: 2014.07.15 STMICROELECTRONICS INT NV
  • US8779601B2 patent drawing
  • US8779601B2 patent drawing
  • US8779601B2 patent drawing

AI summary

An eWLB package for 3D and PoP applications includes a redistribution layer on a support wafer. A semiconductor die is coupled to the redistribution layer, and solder balls are also positioned on the redistribution layer. The die and solder balls are encapsulated in a molding compound layer, which is planarized to expose top portions of the solder balls. A second redistribution layer is formed on the planarized surface of the molding compound layer. A ball grid array can be positioned on the second redistribution layer to couple the semiconductor package to a circuit board, or additional semiconductor dies can be added, each in a respective molding compound layer. The support wafer can act as an interposer, in which case it is processed to form TSVs in electrical contact with the first redistribution layer, and a redistribution layer is formed on the opposite side of the support substrate, as well.