Exhaust Buffer Chamber Heating for Film Deposition Control

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Solution Overview

Problem

In substrate processing for semiconductor devices, residual gases can deposit films on the walls of the exhaust buffer chamber, which can lead to poor film properties and contamination in the processing space.

Innovation Solution

A substrate processing apparatus with a gas supply system that directs gases into the processing space from the opposite side of the substrate receiving surface, incorporating an exhaust buffer chamber with a communication hole and a gas flow blocking wall, and a heating element to control gas flow and deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If an exhaust buffer chamber is used to exhaust gases uniformly, then gas exhaustion efficiency is improved, but film deposition on the chamber walls occurs leading to degraded film properties

Engineering Contradiction:

Improvegas exhaustion efficiencyVSAvoidfilm properties

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent converts the harmful effect of residual gas deposition on chamber walls into a beneficial outcome by heating the exhaust buffer chamber. The heating prevents film deposition that would otherwise occur during gas exhaustion, thereby maintaining film properties while preserving the gas exhaustion efficiency provided by the buffer chamber

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent changes the temperature parameter of the exhaust buffer chamber by introducing a heating element. This parameter change prevents film deposition on the chamber walls during gas exhaustion, resolving the contradiction between maintaining efficient gas exhaustion and preventing degradation of film properties

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables the formation of films with improved properties by effectively managing gas flow and reducing contamination, ensuring better film quality and process efficiency.

Implementation Method 1

a first heating element configured to heat the exhaust buffer chamber

Methodology Applied

Scientific EffectHeating: Heating

Implementation Method 2

a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole

Methodology Applied

Scientific EffectGas flow blocking:

Implementation Method 3

an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space

Methodology Applied

Scientific EffectGas flow:

Data Source

PatentUS9732421B2Substrate processing apparatus

Publication Date: 2017.08.15 KOKUSAI DENKI KK

AI summary

There is provided a substrate processing apparatus. The substrate processing apparatus includes a processing space configured to process a substrate placed on a substrate receiving surface on a substrate support, a gas supply system configured to supply gases into the processing space from the opposite side of the substrate receiving surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, and a first heating element configured to heat the exhaust buffer chamber.