Exhaust Buffer Cleaning in Substrate Processing to Prevent Film Buildup
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Solution Overview
Problem
The mixing of first and second gases during the exhaust process in substrate processing apparatuses can lead to inefficiencies in cleaning the exhaust system, resulting in the formation of uncontrolled films that may become particles.
Innovation Solution
The apparatus includes a third gas supplier to supply a cleaning gas directly to the exhaust buffer structure and a fourth gas supplier to supply a cleaning gas onto the substrate mounting plate, with controlled activation and temperature management to enhance cleaning efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single exhaust system is used for both first gas and second gas, then the device complexity is reduced, but the cleaning efficiency deteriorates due to gas mixing forming uncontrolled films
Solution Approach 1:
The exhaust system is segmented into separate exhaust paths for the first gas and second gas. The first gas exhauster and second gas exhauster are independently connected to the exhaust buffer structure, allowing separate evacuation of the two gases. This prevents mixing of gases that would form uncontrolled films, thereby improving cleaning efficiency while maintaining reasonable device complexity through modular design.
2Manufacturing precision
If cleaning gas is supplied to the exhaust buffer structure, then the purity of the exhaust system is improved, but the loss of substance increases due to additional gas consumption
Solution Approach 1:
The cleaning gas is supplied to the exhaust buffer structure before the actual substrate processing begins. This preliminary cleaning action removes any residual films or contaminants from the exhaust system in advance, ensuring high cleaning quality at the start of processing. The gas consumption is minimized by performing cleaning only when necessary, such as at the beginning of a processing cycle or when contamination is detected.
Data Source
AI summary
There is provided a technique that includes: a process container processing one or more substrates; a support installed inside the process container and supporting the substrates; a first gas supplier capable of supplying gas in the process container; a second gas supplier capable of supplying in the process container; an exhaust buffer structure installed along outer circumference of the support; a third gas supplier capable of supplying first cleaning gas to the exhaust buffer structure; a fourth gas supplier capable of supplying second cleaning gas onto the support; and a controller configured to control the third and fourth gas suppliers to control a frequency or number of times for supplying each of the first and the second cleaning gas, or a supply time of each of the first and second cleaning gases, such that over-etching in the exhaust buffer structure or in the support is prevented.