Semiconductor Exhaust Cleaning via Bypass Gas Control
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Solution Overview
Problem
Conventional gas cleaning techniques in semiconductor manufacturing often leave non-reactive gases adsorbed or by-products in the exhaust system, leading to unexpected stops of vacuum exhaust apparatuses and difficulties in maintenance.
Innovation Solution
A substrate processing apparatus and method that includes a cleaning gas bypass supply unit to supply a cleaning gas to the exhaust unit, with a monitoring system to control the gas flow rate based on signals from a cleaning monitoring unit, ensuring effective cleaning of the exhaust system and preventing apparatus malfunctions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional gas cleaning technique is used to remove film from reaction chamber, then film removal is achieved, but non-reactive gas adsorption and by-products remain in exhaust piping
Solution Approach 1:
The gas cleaning process is segmented into two distinct phases: first cleaning the reaction chamber, then cleaning the exhaust piping separately through a bypass line. This segmentation allows each component to be cleaned independently, ensuring thorough removal of contaminants from both the chamber and piping without interfering with each other's cleaning effectiveness.
Solution Approach 2:
A bypass line is introduced as an intermediary pathway that allows cleaning gas to reach the exhaust piping without passing through the reaction chamber. This intermediary structure enables direct cleaning of the piping system, removing adsorbed non-reactive gases and by-products that would otherwise remain trapped in the exhaust system.
2Manufacturing precision
If cleaning gas flow rate is increased to improve cleaning effectiveness, then cleaning performance improves, but energy consumption and gas usage increase
Solution Approach 1:
A cleaning monitoring unit continuously monitors the state of the exhaust piping during the cleaning process. The main control unit receives this feedback and dynamically adjusts the cleaning gas flow rate accordingly, increasing flow when cleaning is needed and reducing it when cleaning is complete or less intensive cleaning is sufficient. This feedback-controlled approach optimizes cleaning effectiveness while minimizing unnecessary gas consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient cleaning of the exhaust system, maintaining consistent exhaust speed, extending the lifespan of vacuum equipment, and simplifying maintenance by preventing unexpected stops and ensuring stable operation.
Implementation Method 1
a cleaning gas to the exhaust unit... monitoring the exhaust unit... controlling a flow rate of the cleaning gas
Data Source
AI summary
The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.