Exhaust System Deactivator Injection for Semiconductor Film Deposition
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Solution Overview
Problem
The frequent maintenance of exhaust systems in semiconductor device manufacturing is required due to the deposition of extraneous matter, which increases downtime and operational costs.
Innovation Solution
A method is introduced where a deactivator, such as an oxygen-containing gas, is directly supplied into the exhaust system when the precursor does not flow through it, oxidizing and stabilizing any remaining precursor, thereby reducing the frequency of maintenance and extending the lifespan of vacuum pumps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If maintenance of the exhaust system is performed at a predetermined timing based on deposition of extraneous matter, then the exhaust system can be maintained, but the maintenance frequency is high which increases downtime and operational costs
Solution Approach 1:
The patent applies preliminary action by performing oxidation treatment of the precursor film on the exhaust system inner wall before maintenance is actually needed. By oxidizing the precursor film during or after film formation processes, the system prepares the exhaust system in advance to prevent excessive deposition of extraneous matter, thereby reducing the frequency of maintenance operations and minimizing downtime.
2Reliability
If maintenance of the exhaust system is performed frequently to remove deposited extraneous matter, then the exhaust system reliability is maintained, but operational costs increase
Solution Approach 1:
The patent implements self-service by enabling the exhaust system to treat its own precursor film deposits through oxidation during normal film formation operations. The oxidizing atmosphere is generated within the system itself during processing cycles, allowing the exhaust system to self-clean without requiring separate maintenance operations, thereby reducing operational costs while maintaining reliability.
3Productivity
If the precursor film on the exhaust system inner wall is not treated, then the system operates continuously without interruption, but harmful gases are generated during maintenance and safety is compromised
Solution Approach 1:
The patent converts the harmful precursor film that would otherwise generate dangerous gases during maintenance into a beneficial oxidized layer. By intentionally oxidizing the precursor film during normal operations, the system transforms a potential safety hazard into a protective layer that prevents harmful gas generation during subsequent maintenance activities, thus resolving the safety issue while maintaining continuous productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a reduced maintenance frequency of the exhaust system, enhanced safety during maintenance, and prolonged equipment lifespan by forming a stable and dense silicon oxide film that prevents harmful gas generation and reduces downtime.
Implementation Method 1
supplying a deactivator that is a material different from the reactant directly into the exhaust system when the precursor does not flow through the exhaust system
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. In the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.