Semiconductor Exhaust Pipe Corrosion Control via Dynamic Gas Flow
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Solution Overview
Problem
The existing cleaning processes for semiconductor device manufacturing often cause damage to exhaust pipes due to the corrosive nature of cleaning gases, particularly when the temperature of the exhaust connection portion exceeds a tolerance temperature, leading to corrosion and particle generation.
Innovation Solution
A method is introduced where the cleaning gas is supplied at a first flow rate until the temperature of the exhaust connection portion reaches a first temperature, then gradually decreased to a second flow rate, maintaining the temperature below the tolerance level to prevent corrosion, using a controlled flow rate based on temperature detection to ensure efficient cleaning without overheating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a cleaning gas is supplied at a high flow rate to remove deposits from the processing chamber, then the cleaning efficiency is improved, but the temperature of the exhaust connection portion increases causing corrosion damage to the exhaust pipe
Solution Approach 1:
The cleaning gas flow rate is dynamically adjusted based on the temperature of the exhaust connection portion. The flow rate control unit increases the flow rate when the temperature is below a predetermined threshold to enhance cleaning efficiency, and decreases the flow rate when the temperature reaches the threshold to prevent corrosion damage. This dynamic adjustment resolves the contradiction between cleaning efficiency and corrosion prevention.
Solution Approach 2:
The flow rate of the cleaning gas is changed as a control parameter to balance cleaning efficiency and corrosion prevention. By monitoring the temperature of the exhaust connection portion and adjusting the gas flow rate accordingly, the system optimizes the cleaning process while preventing thermal corrosion damage to the exhaust pipe.
2Reliability
If the cleaning gas flow rate is limited to prevent exhaust pipe corrosion, then the damage to the exhaust pipe is reduced, but the cleaning time increases reducing productivity
Solution Approach 1:
Rather than using a fixed low flow rate, the system dynamically adjusts the cleaning gas flow rate based on real-time temperature monitoring of the exhaust connection portion. This allows the system to operate at high flow rates when safe (temperature below threshold) and reduce flow rate only when necessary (temperature at threshold), thereby maintaining both pipe durability and cleaning productivity.
Solution Approach 2:
The flow rate control unit uses feedback from the temperature detection unit to automatically adjust the cleaning gas flow rate. When the temperature of the exhaust connection portion reaches the predetermined threshold, the feedback mechanism triggers a reduction in flow rate to prevent corrosion, while allowing high flow rates during safe temperature conditions to maintain efficient cleaning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses damage to the exhaust pipe by maintaining the temperature within a safe range, shortening cleaning time, improving productivity, and preventing corrosion, thus enhancing the yield of semiconductor devices.
Implementation Method 1
a film formation process may be performed in which a source gas or a reaction gas is supplied to a substrate in a processing chamber to form a film on the substrate. When the film formation process is performed, some undesirable deposits may be adhered to the inside of the processing chamber. For this reason, after the film formation process, sometimes, a cleaning process may be carried out in which a cleaning gas is supplied into the processing chamber to remove the deposits accumulate on the inside of the processing chamber.
Implementation Method 2
a heating unit configured to heat the exhaust connection portion to a predetermined temperature or higher before the cleaning process
Data Source
AI summary
A cleaning method includes: removing deposits adhered to an inside of a processing vessel by forming a film on a substrate in the processing vessel, and thereafter, supplying a cleaning gas into the processing vessel, wherein the removing the deposits includes: a first step of supplying the cleaning gas into the processing vessel at a first flow rate when a temperature of a connection portion connecting an exhaust pipe that exhausts the interior of the processing vessel and the processing vessel is lower than a first temperature; and a second step of supplying the cleaning gas to the processing vessel while gradually decreasing the flow rate of the cleaning gas from the first flow rate to a second flow rate lower than the first flow rate when the temperature of the connection portion reaches a first temperature.