Exponentially Doped Solar Cell Subcells for Efficiency

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Solution Overview

Problem

Existing multijunction solar cells, particularly inverted metamorphic structures, face challenges in achieving commercially viable and energy-efficient power conversion due to limitations in material choice and fabrication steps, which are inadequate for sophisticated applications like satellites requiring improved power and energy efficiency.

Innovation Solution

A method for forming a multijunction solar cell with a specific layer structure including exponentially doped profiles in the base of the lower subcell, using semiconductor materials like InGaP and GaAs, and a metamorphic grading interlayer to enhance lattice mismatch and reduce recombination loss, along with a process involving substrate deposition and removal to optimize the solar cell structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional multijunction solar cell structures are used, then fabrication is simpler, but power and energy conversion efficiency are insufficient for sophisticated applications

Engineering Contradiction:
Improvepower and energy conversion efficiencyVSAvoidcell structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The solar cell is divided into multiple subcells (upper, middle, lower) with different band gaps, each optimized for specific wavelength ranges. This segmentation allows independent optimization of each subcell's doping profile and material composition, achieving high overall conversion efficiency while managing complexity through modular design

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the solar cell structure are assigned different doping profiles tailored to local requirements. The upper subcell uses uniform doping, the middle subcell uses exponentially doped profiles, and the lower subcell uses uniformly doped structures. This local optimization of doping characteristics maximizes carrier collection efficiency in each region

Inventive Principle:
Principle #3Local quality

2Reliability

If exponentially doped profiles are used in the lower subcell base, then minority carrier collection is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveminority carrier collection efficiencyVSAvoiddoping profile fabrication
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The doping concentration parameter is varied exponentially through the base region thickness, creating a gradient from high to low concentration. This parameter change optimizes the electric field distribution for enhanced minority carrier drift and diffusion, improving collection efficiency while the exponential profile can be achieved through controlled epitaxial growth

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If metamorphic grading interlayers are used to accommodate lattice mismatch, then material selection flexibility is improved, but fabrication difficulty increases

Engineering Contradiction:
Improvematerial selection flexibilityVSAvoidfabrication process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

A metamorphic grading interlayer is introduced as an intermediary structure between subcells with different lattice constants. This interlayer gradually transitions the lattice constant from one material system to another, accommodating the mismatch and enabling the use of optimal materials for each subcell's band gap requirements while maintaining crystalline quality

Inventive Principle:
Principle #24Intermediary (Mediator)

4Stability of the object's composition

If inverted metamorphic structure is used, then lattice mismatch management is improved, but commercial viability and energy efficiency are insufficient

Engineering Contradiction:
Improvelattice mismatch managementVSAvoidcommercial viability and energy efficiency
Core Design Contradiction:
Stability of the object's compositionVSProductivity

Solution Approach 1:

The invention applies different doping strategies to different subcells within the inverted metamorphic structure. The lower subcell base uses exponential doping for optimal carrier collection, while other regions use uniform doping. This localized optimization of doping profiles, combined with the inverted metamorphic architecture, achieves both lattice mismatch management and high energy conversion efficiency for commercial viability

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method results in a 6.7% increase in current collection and overall efficiency of the solar cell, enhancing radiation hardness and power conversion efficiency suitable for space-related applications, with potential for further improvements in minority carrier collection and long-term performance.

Implementation Method 1

at least the base of the lower subcell has an exponentially doped profile

Methodology Applied
Scientific EffectExponential doping profile: Dopants

Implementation Method 2

forming a third solar subcell having a base and an emitter over said grading interlayer having a fourth band gap smaller than said second band gap such that said third subcell is lattice mis-matched with respect to said second subcell

Methodology Applied
Scientific EffectLattice mismatch: Deformation

Implementation Method 3

Photovoltaic cells, also called solar cells, are one of the most important new energy sources

Methodology Applied
Scientific EffectPhotovoltaic effect: Photovoltaic Effect

Data Source

PatentEP2073276B8Exponentially doped layers in inverted metamorphic multijunction solar cells
Publication Date: 2019.03.06 SOLAERO TECHNOLOGIES CORP

AI summary

A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mis-matched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile.