Exposed Heat-Dissipating Semiconductor Package for High-Frequency Power

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Solution Overview

Problem

Conventional semiconductor device packages face issues such as increased parasitic effects and heat management challenges as operating frequencies rise, leading to variability in inductance, reduced performance, and potential damage due to high heat generation, especially in power amplifiers operating above 5 GHz.

Innovation Solution

Implementing a flip-chip configuration with exposed heat dissipating surfaces on semiconductor devices, utilizing thermally conductive members and protective structures to facilitate heat dissipation through the top side of the package, thereby reducing parasitic effects and optimizing electrical performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If conventional semiconductor device packages are used with increasing operating frequencies, then power handling capability is improved, but parasitic effects increase causing variability in inductance and performance degradation

Engineering Contradiction:
Improvepower handling capabilityVSAvoidperformance consistency
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent transitions from planar trace-based inductors to three-dimensional stacked inductor structures, where multiple inductor windings are vertically stacked and interconnected through conductive vias. This dimensional change reduces the parasitic inductance by shortening current paths and minimizing loop areas, thereby maintaining performance consistency at high frequencies while preserving power handling capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Power

If power amplifier operation is increased to higher frequencies and power levels, then output power capability is improved, but heat generation increases causing potential device damage

Engineering Contradiction:
Improveoutput power capabilityVSAvoidheat generation
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent introduces a dedicated heat sink structure as an intermediary thermal management component, coupled to the semiconductor die through thermally conductive materials. This heat sink acts as a thermal mediator that efficiently conducts heat away from the high-power amplifier devices, enabling sustained high output power operation without thermal damage by maintaining operating temperatures within safe limits.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Device complexity

If trace-based inductor structures are used in conventional packages, then device complexity is reduced, but parasitic inductance increases at high frequencies

Engineering Contradiction:
Improvestructure simplicityVSAvoidparasitic inductance
Core Design Contradiction:
Device complexityVSObject-affected harmful factors

Solution Approach 1:

The patent employs vertical stacking of inductor windings with interlayer conductive connections, transforming the traditional planar inductor layout into a three-dimensional structure. This dimensional transformation reduces the effective loop area and current path length, thereby minimizing parasitic inductance effects while maintaining relatively simple fabrication processes that build upon conventional planar technology.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Reliability

If conventional packaging is used without exposed heat dissipating surfaces, then device protection is improved, but heat dissipation capability is reduced

Engineering Contradiction:
Improvedevice protectionVSAvoidheat dissipation capability
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent integrates the heat sink structure to serve multiple functions simultaneously: it provides exposed heat dissipating surfaces for thermal management, offers mechanical support for the semiconductor die, and creates mounting surfaces for additional external components. This multi-functional design enables effective heat dissipation while maintaining device protection and enabling additional functionality without requiring separate dedicated structures.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces parasitic inductance, enhances heat dissipation, and improves the operational efficiency and reliability of semiconductor devices by routing heat away from the external circuit, allowing for additional functionality on the external device.

Implementation Method 1

utilizing thermally conductive members and protective structures to facilitate heat dissipation through the top side of the package

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12470185B2Semiconductor device packages with exposed heat dissipating surfaces and methods of fabricating the same
Publication Date: 2025.11.11 WOLFSPEED INC
  • US12470185B2 patent drawing
  • US12470185B2 patent drawing
  • US12470185B2 patent drawing

AI summary

A semiconductor device package includes an interconnect structure with a first surface having at least one die thereon and a second surface that is opposite the first surface and is configured to be coupled to an external device. A protective structure on the first surface of the interconnect structure exposes a heat dissipating surface facing away from the interconnect structure in one or more directions. Related devices and fabrication methods are also discussed.