Exposure Head Circuit Layout for Smaller LED Driver Chips
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Solution Overview
Problem
Existing exposure heads with integrated light emitting elements and drive circuits face challenges in reducing chip size due to the need for semiconductor processes with high withstand voltage, leading to increased transistor size and overall chip dimensions.
Innovation Solution
The exposure head is configured with a substrate that includes strip-shaped semiconductor chips containing light emitting elements and drive circuits, operating between specific potential differences, allowing for a low withstand voltage while maintaining forward voltage and reducing chip size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a semiconductor process with high withstand voltage is used to secure forward voltage of light emitting element, then light emission quantity is maintained, but transistor size increases and chip size increases
Solution Approach 1:
The patent changes the voltage parameter by operating the drive circuit at a lower withstand voltage than the light emitting element requires. The drive circuit operates between 0V and 5V while the light emitting element operates between 0V and 10V, allowing the use of low-withstand-voltage semiconductor processes that produce smaller transistors and chips.
Solution Approach 2:
The patent segments the voltage requirements by separating the drive circuit operation from the light emitting element operation. The drive circuit uses a subset of the voltage range (0V-5V) while the light emitting element uses the full range (0V-10V), allowing different semiconductor process specifications to be applied to different components.
2Reliability
If a semiconductor process with high withstand voltage is used, then forward voltage requirement is met, but device complexity increases due to larger transistor dimensions
Solution Approach 1:
The patent changes the voltage parameter by operating the drive circuit at a lower withstand voltage than the light emitting element requires. The drive circuit operates between 0V and 5V while the light emitting element operates between 0V and 10V, allowing the use of low-withstand-voltage semiconductor processes that produce smaller transistors and chips.
Solution Approach 2:
The patent segments the voltage requirements by separating the drive circuit operation from the light emitting element operation. The drive circuit uses a subset of the voltage range (0V-5V) while the light emitting element uses the full range (0V-10V), allowing different semiconductor process specifications to be applied to different components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the formation of a drive circuit with a low withstand voltage, achieving a smaller chip size without compromising light emission quantity, thus optimizing the exposure head's efficiency and compactness.
Implementation Method 1
a plurality of light emitting elements that emit light and a drive circuit that drives the light emitting element
Implementation Method 2
a lens array configured to collect light from the light emitting elements on the photosensitive drum
Data Source
AI summary
An exposure head configured to expose a photosensitive drum includes: a substrate; a plurality of strip-shaped semiconductor chips each including a plurality of light emitting elements that emit light and a drive circuit that drives the light emitting element, the plurality of semiconductor chips being arranged on the substrate; and a lens array configured to collect light from the light emitting elements on the photosensitive drum. The drive circuit operates between a first potential and a second potential, the light emitting element operates between a third potential and a fourth potential, and a potential difference between the third potential and the fourth potential is equal to or larger than a potential difference between the first potential and the second potential.