Exposure Mask Bridge-Line Layout for Mixed-Pitch Pattern Fidelity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device manufacturing, the formation of patterns with varying pitches using an optical apparatus with high resolution often results in profile deterioration due to focus errors during the exposure process, particularly in regions requiring different pattern widths.
Innovation Solution
The use of an exposure mask with a specific design, including a first line, a second line, and at least one bridge line, allows for the formation of patterns with different widths in distinct regions of the semiconductor device, thereby mitigating focus errors and maintaining pattern quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an optical apparatus with high resolution is used to form fine patterns, then the integration degree and size of the semiconductor device are improved, but profile deterioration occurs due to focus errors in regions with varying pitches
Solution Approach 1:
The exposure mask pattern is segmented into multiple pitch regions (first pitch region with narrower lines and second pitch region with wider lines), allowing each region to be optimized independently for its specific pitch requirements, thereby maintaining profile quality across varying pattern widths
Solution Approach 2:
Different regions of the exposure mask are designed with different local qualities - the first pitch region uses parameters optimized for narrow lines while the second pitch region uses parameters optimized for wider lines, ensuring each region achieves optimal focus and profile quality for its specific dimensions
2Length of moving object
If patterns with various pitches are formed using an optical apparatus optimal to a specific region, then the pattern width is controlled accurately, but focus errors cause profile deterioration in other regions
Solution Approach 1:
The exposure mask is designed with multi-functionality to handle both first pitch and second pitch patterns simultaneously in different regions, allowing a single exposure process to achieve accurate width control and profile quality across varying pitch requirements without focus errors
Data Source
AI summary
An exposure mask for forming a pattern having a first width includes a first line, a second line, and at least one bridge line. The first line may be extended in a first direction. The first line has a second width narrower than the first width. The second line may be extended parallel to and spaced apart from the first line. The second line is formed having the second width. The bridge line may be connected between the first line and the second line.