Exposure Method Nonlinear Deformation Correction
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Solution Overview
Problem
Conventional exposure methods struggle to accurately measure and correct nonlinear deformations in unit exposure fields during the manufacturing of electronic devices, such as semiconductor and liquid crystal display devices, which are critical for achieving high precision in pattern superimposition.
Innovation Solution
An exposure method that involves detecting the positions of multiple microscopic regions within a unit exposure field, calculating the deformation state using this information, and modifying the shape of the bright-dark pattern to be exposed based on the calculated deformation, thereby improving the accuracy of pattern superimposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional alignment methods using special marks are used, then alignment can be performed, but measurement precision of nonlinear deformation is insufficient
Solution Approach 1:
The invention uses circuit patterns that already exist on the wafer for dual purposes: both as functional circuit elements and as position detection marks for alignment. This eliminates the need for separate special alignment marks while enabling accurate nonlinear deformation measurement through multiple detection points across the exposure field.
Solution Approach 2:
The circuit patterns on the wafer serve themselves by functioning both as the product being manufactured and as the measurement reference for alignment. The existing circuit structures provide the necessary detection points without requiring additional external alignment infrastructure.
2Measurement precision
If more position detection marks are added to measure nonlinear deformation, then measurement precision improves, but manufacturing complexity increases
Solution Approach 1:
Circuit patterns serve dual functions as both functional elements and alignment references, eliminating the need for separate detection marks and simplifying the manufacturing process while enabling high-precision nonlinear deformation measurement.
Solution Approach 2:
The invention merges the alignment reference function with the circuit pattern structure itself. By combining position detection functionality with the circuit design, the system achieves accurate deformation measurement without adding separate manufacturing steps for creating alignment marks.
3Productivity
If LSI circuit patterns are miniaturized, then device integration increases, but pattern superimposition accuracy becomes more difficult to maintain
Solution Approach 1:
The invention replaces traditional mechanical alignment methods with optical detection of circuit pattern positions. By using optical detection to measure actual circuit pattern locations and calculate nonlinear deformation, the system achieves high superimposition accuracy even as circuit features are miniaturized and integration density increases.
Solution Approach 2:
The system uses optical detection to obtain feedback on actual circuit pattern positions, calculates nonlinear deformation from these measurements, and applies correction to achieve accurate superimposition. This closed-loop approach maintains manufacturing precision despite circuit miniaturization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables rapid and accurate measurement of nonlinear deformations, allowing for high-precision superimposition of patterns on a substrate, thereby enhancing the manufacturing accuracy of electronic devices.
Implementation Method 1
The alignment unit then forms a magnified image of the wafer alignment mark on an imaging device with an imaging optical system
Implementation Method 2
forms a magnified image of the wafer alignment mark on an imaging device with an imaging optical system
Implementation Method 3
exposing a bright-dark pattern onto unit exposure fields of a substrate via a projection optical system
Implementation Method 4
exposing a bright-dark pattern onto unit exposure fields of a substrate via a projection optical system
Data Source
AI summary
An exposure method for exposing a bright-dark pattern onto each exposure region of a substrate via a projection optical system includes a position detection process for detecting positions of a plurality of microscopic regions in a unit exposure field of the substrate, a deformation calculation step of calculating a state of deformation in the unit exposure field based on information related to the positions of the plurality of microscopic regions obtained in the position detection step, and a shape modification step of modifying the shape of the bright-dark pattern to be exposed on the substrate based on the deformation state obtained in the deformation calculation step. The microscopic regions detected in the position detection step include a circuit pattern formed in the unit exposure field.