Extended Backside Contact Structure for 3DSFET Alignment

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Solution Overview

Problem

In high-density semiconductor devices like 3DSFETs, precise alignment and connection of backside contact plugs with interconnect structures are challenging, leading to increased device size and contact resistance due to the need for additional metal lines to compensate for misalignment.

Innovation Solution

The implementation of an extended backside contact plug structure that is not vertically overlapped by the source/drain region, connected to a backside isolation structure and backside metal lines, allowing direct alignment and connection without additional metal lines, thereby reducing device size and contact resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If additional metal lines are formed to compensate for misalignment between backside contact plug and interconnect structure, then connection reliability is improved, but device size increases and manufacturing complexity increases

Engineering Contradiction:
Improveconnection reliabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The contact plug is extended in the horizontal plane (another dimension) rather than solely relying on vertical alignment. This dimensional change allows the contact plug to reach and connect with the interconnect structure even when precise vertical alignment is difficult to achieve, thereby improving connection reliability without requiring additional metal lines and reducing manufacturing complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If additional metal lines are formed to compensate for misalignment, then connection reliability is improved, but device size increases

Engineering Contradiction:
Improveconnection reliabilityVSAvoiddevice size
Core Design Contradiction:
ReliabilityVSLength of stationary object

Solution Approach 1:

The contact plug is extended horizontally in another dimension to achieve connection with the interconnect structure. This approach eliminates the need for additional metal lines that would increase device size, while still ensuring reliable connection through the extended contact plug structure

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Length of stationary object

If extended backside contact plug structure is implemented, then device size is reduced and manufacturing flexibility is improved, but alignment precision requirements increase

Engineering Contradiction:
Improvedevice sizeVSAvoidalignment precision
Core Design Contradiction:
Length of stationary objectVSManufacturing precision

Solution Approach 1:

The contact plug is extended horizontally in another dimension, which actually reduces the need for precise vertical alignment. The horizontal extension provides a larger target area for connection, thereby reducing alignment precision requirements rather than increasing them

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The contact plug is pre-positioned and extended to reach the interconnect structure before final connection steps. This preliminary positioning action ensures that the contact plug is already in the correct horizontal location, reducing the precision requirements for subsequent alignment operations

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20240290853A1Semiconductor device including extended backside contact structure
Publication Date: 2024.08.29 SAMSUNG ELECTRONICS CO LTD
  • US20240290853A1 patent drawing
  • US20240290853A1 patent drawing
  • US20240290853A1 patent drawing

AI summary

Provided is a semiconductor device which includes: a backside contact plug, formed at a back side of the semiconductor device, below a source/drain region connected to the backside contact plug, wherein the backside contact plug includes a 1st portion which is not vertically overlapped by the circuit element.