Extended Backside Contact Plug Layout for Alignment-Tolerant 3DSFETs

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Solution Overview

Problem

In high-density semiconductor devices like 3DSFETs, precise alignment and connection of backside contact plugs with interconnect structures are challenging, leading to increased device size and contact resistance due to the need for additional metal lines to compensate for misalignment.

Innovation Solution

The implementation of an extended backside contact plug structure that is not vertically overlapped by the source/drain region, allowing direct connection to backside metal lines without additional metal lines, and is manufactured using a method involving dummy patterns and shallow trench isolation to facilitate alignment and reduce contact resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If additional metal lines are formed to compensate for misalignment between backside contact plugs and interconnect structures, then connection reliability is improved, but device size increases and manufacturing complexity increases

Engineering Contradiction:
Improveconnection reliabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The backside contact plug is extended in advance during the formation process to preemptively cover potential misalignment areas. This preliminary extension ensures that even if alignment deviations occur during subsequent manufacturing steps, the contact plug maintains reliable electrical connection without requiring additional compensatory metal lines.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The backside contact plug structure is segmented into multiple regions: a first region vertically overlapped by the source/drain region and a second region extending beyond it. This segmentation allows the contact plug to serve multiple functions - direct connection under the source/drain region and extended connection for alignment compensation, thereby eliminating the need for additional metal lines.

Inventive Principle:
Principle #1Segmentation

2Reliability

If additional metal lines are formed to compensate for misalignment, then connection reliability is improved, but device area increases

Engineering Contradiction:
Improveconnection reliabilityVSAvoiddevice area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The extended backside contact plug merges the functions of the original contact plug and the alignment compensation structure into a single integrated element. By extending the contact plug to include both the region under the source/drain region and the extended region, the design eliminates the need for separate additional metal lines, thereby maintaining connection reliability while reducing overall device area.

Inventive Principle:
Principle #5Merging (Combining)

3Area of stationary object

If precise alignment is achieved between backside contact plugs and interconnect structures, then device size is reduced, but manufacturing precision requirements increase

Engineering Contradiction:
Improvedevice sizeVSAvoidalignment precision
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The geometry of the backside contact plug is changed by extending it beyond the source/drain region to create an extended region. This parameter change in the contact plug structure transforms the alignment tolerance issue - the extended region provides a larger target area that can accommodate alignment variations, thereby reducing the actual manufacturing precision requirements while maintaining compact device size.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentEP4421860A1Semiconductor device including extended backside contact structure
Publication Date: 2024.08.28 SAMSUNG ELECTRONICS CO LTD
  • EP4421860A1 patent drawingFigure 1A~1C
  • EP4421860A1 patent drawingFigure 2A~2C
  • EP4421860A1 patent drawingFigure 3A~3C

AI summary

Provided is a semiconductor device which includes: a backside contact plug, formed at a back side of the semiconductor device, below a source/drain region connected to the backside contact plug, wherein the backside contact plug includes a 1st portion which is not vertically overlapped by the circuit element.