Extended Metallization Layout for Dense Pillar Interconnects
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Solution Overview
Problem
There is a need to improve the performance of integrated devices and packages while maintaining a small form factor, which is hindered by the limitations of existing interconnect configurations.
Innovation Solution
The integration of pillar interconnects in a periphery region of the device that is free of die interconnects and active regions, allowing for additional electrical paths and reduced pitch requirements, enhancing performance and manufacturing yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional interconnects are added to improve device performance, then electrical connectivity is enhanced, but device area increases
Solution Approach 1:
The patent extends metallization interconnects into the periphery region laterally beyond the active die area, utilizing unused space in the horizontal plane. This allows additional pillar interconnects to be formed without increasing the active device footprint, effectively adding connectivity in a dimensional extension that does not consume precious active area.
Solution Approach 2:
The invention creates a differentiated structure where the periphery region has distinct properties from the active region. The periphery die interconnection portion is specifically designed to be free of die interconnects and active regions, allowing it to serve exclusively for extended metallization and pillar interconnect formation, thereby optimizing local space utilization.
2Area of stationary object
If device area is reduced to maintain small form factor, then form factor is improved, but number of interconnects is limited
Solution Approach 1:
By extending metallization into the periphery region, the patent effectively increases the available interconnect density within the same active device area. The extended metallization region provides additional locations for pillar interconnect formation without expanding the active die footprint, thus maintaining small form factor while increasing interconnect count.
Solution Approach 2:
The periphery region, which would traditionally be unused or used for packaging, is repurposed to serve multiple functions: providing extended metallization paths, hosting additional pillar interconnects, and enabling both TSV and non-TSV interconnect configurations. This multi-functional use of periphery space maximizes interconnect capacity within limited area.
3Productivity
If periphery region is used for pillar interconnects, then manufacturing yield is improved, but die interconnect density in active region must be optimized
Solution Approach 1:
The patent divides the interconnection structure into distinct segments: an active die interconnection portion containing die interconnects and active regions, and a periphery die interconnection portion free of die interconnects. This segmentation allows each region to be independently optimized - the active region for high-density die interconnects and the periphery region for extended metallization and pillar interconnects, thereby improving overall yield through modular design.
Solution Approach 2:
The invention applies different interconnect configurations to different regions: the active region uses traditional die interconnect configurations optimized for transistor connectivity, while the periphery region uses extended metallization with pillar interconnects optimized for packaging and external connectivity. This local optimization of interconnect quality in each region improves manufacturing yield by allowing independent process optimization.
Data Source
AI summary
An integrated device comprising a die substrate; a die interconnection portion coupled to the die substrate, wherein the die interconnection portion comprises: at least one die dielectric layer; and a plurality of die interconnects, wherein the die interconnection portion comprises: an inner die interconnection portion; and a periphery die interconnection portion, wherein the periphery die interconnect portion is free of the plurality of die interconnects; a plurality of pad interconnects coupled to the die interconnection portion; a plurality of metallization interconnects coupled to the plurality of pad interconnects, wherein at least one metallization interconnect from the plurality of metallization interconnects, vertically overlaps with the periphery die interconnection portion, and a plurality of pillar interconnects coupled to the plurality of metallization interconnects.