Extension Material Layer for Photo Resist Pattern Formation
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Solution Overview
Problem
As semiconductor technology advances to nanometer process nodes, challenges arise in forming finer patterns during lithography operations due to thin photo resist layers, which can lead to insufficient etching, resist scum residue, and uneven thickness, resulting in pattern defects.
Innovation Solution
A pattern formation method involving the use of an extension material layer deposited over the photo resist pattern, which is formed through non-conformal chemical vapor deposition, and subsequent descum etching operations to compensate for photo resist thickness and remove residues, ensuring accurate pattern formation and preventing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If thin photo resist layers are used for finer patterns, then lithography resolution is improved, but etching sufficiency and pattern reliability deteriorate
Solution Approach 1:
An extension material layer is deposited over the photo resist pattern to act as an intermediary protective layer. This extension layer compensates for the thinness of the photo resist, providing sufficient thickness for reliable etching while preserving the fine pattern resolution achieved by the thin photo resist layer.
Solution Approach 2:
The solution adds a vertical dimension by depositing an extension material layer over the photo resist pattern. This increases the overall height/thickness of the pattern structure without affecting the lateral dimensions, thereby maintaining lithography resolution while improving etching sufficiency and pattern reliability.
2Productivity
If photo resist layers are made thinner for higher density, then device density is improved, but pattern defects increase due to insufficient thickness
Solution Approach 1:
The extension material layer serves as a protective intermediary that prevents pattern defects during etching operations. It compensates for the reduced thickness of thin photo resist layers used in high-density manufacturing, ensuring adequate protection and preventing defects while enabling higher device density.
3Device complexity
If conventional photo resist patterns are used without extension layers, then process simplicity is maintained, but resist residues and pattern defects occur
Solution Approach 1:
The extension material layer acts as an intermediary protective barrier that prevents resist residues and pattern defects. Although it adds a process step, the layer is deposited conformally and can be removed in a single etching step, balancing the added complexity with significant improvements in pattern quality and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively increases the 'height' of the photo resist pattern, prevents pattern defects, and allows for the removal of resist residues, enhancing the precision and reliability of semiconductor device manufacturing.
Implementation Method 1
An extension material layer is formed on the photo resist pattern
Implementation Method 2
subsequent descum etching operations to compensate for photo resist thickness and remove residues
Data Source
AI summary
In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.