External Dummy Area Layout for Reliable Semiconductor Active Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As the degree of integration in semiconductor devices increases, the reliability of small-sized circuit active regions decreases due to reduced component sizes, leading to performance and multifunctionality challenges.
Innovation Solution
Incorporating first and second external dummy areas with specific gate line and active region configurations, along with gate cut insulation regions, to enhance the reliability of circuit active regions by providing additional structural support and isolation between circuit and dummy areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration is increased, then the size of circuit active regions is reduced, but the reliability of circuit active regions becomes low
Solution Approach 1:
The patent creates dummy active regions that are copies of the circuit active regions, placing them in external dummy areas adjacent to the circuit area. These dummy regions replicate the structural characteristics of the actual circuit active regions, providing a reference configuration that maintains reliability without increasing the size of functional circuit elements.
Solution Approach 2:
The patent introduces gate cut insulation regions as intermediary elements between the circuit gate lines and external dummy gate lines. These insulation regions act as mediators that electrically isolate the functional circuit from the dummy structures, preventing interference while maintaining the beneficial structural support of the dummy areas.
2Reliability
If external dummy areas are added to improve reliability, then device complexity increases
Solution Approach 1:
The patent merges the formation of dummy active regions and dummy gate lines into the same manufacturing processes used for creating circuit active regions and gate lines. By combining these structures into a single integrated layout with unified processing steps, the patent adds reliability features without proportionally increasing manufacturing complexity.
Solution Approach 2:
The patent applies different structural qualities to different regions: the circuit area contains fully functional active regions and gate lines, while the external dummy areas contain simplified dummy structures that mirror the circuit layout. This local differentiation allows the dummy regions to provide structural benefits without requiring the same level of functional complexity throughout the entire device.
Data Source
AI summary
A semiconductor device includes first and second external dummy areas, and a circuit area between the first and second external dummy areas. The circuit area includes circuit active regions and circuit gate lines. Each external dummy area includes an external dummy active region and external dummy gate lines overlapping the external dummy active region and spaced apart from the circuit gate lines. The external dummy active region has a linear shape extending in a first horizontal direction or a shape including active portions isolated from direct contact with each other and extending sequentially in the first horizontal direction. The circuit active regions are between the first and second external dummy active regions and include a first plurality of circuit active regions extending sequentially in the first horizontal direction and a second plurality of circuit active regions extending sequentially in a second horizontal direction perpendicular to the first horizontal direction.