Endpoint Detection via Extraction Current Monitoring

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing substrate processing techniques, such as reactive ion etching, face challenges in accurately determining the endpoint of etching due to variations in layer thickness and etch rate, requiring extensive engineering for signal interpretation and compatibility with processing apparatus.

Innovation Solution

A processing apparatus and method that utilize a current measurement component to monitor extraction current during ion processing, generating an endpoint detection signal based on changes in extraction current, allowing for real-time adjustment of processing conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If optical emission spectroscopy or spectroscopic ellipsometry is used to monitor endpoint, then endpoint detection capability is improved, but device complexity and engineering requirements increase

Engineering Contradiction:
Improveendpoint detection capabilityVSAvoidengineering requirements
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The processing apparatus itself generates the measurement signal through its normal ion extraction operation. The extraction current that is already being used for ion delivery to the substrate also serves as the measurement signal for endpoint detection, eliminating the need for separate measurement equipment

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The extraction current measurement serves dual purposes: controlling the ion beam delivery to the substrate and simultaneously detecting the process endpoint. This multi-functional approach eliminates dedicated measurement equipment and reduces system complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Ease of manufacture

If timed etch approach is used to control etching, then process control is simplified, but manufacturing precision deteriorates due to variations in layer thickness and etch rate

Engineering Contradiction:
Improveprocess control simplicityVSAvoidetch depth control
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The system continuously monitors extraction current during the etching process and uses this feedback to detect when the endpoint is reached. This real-time feedback allows the system to automatically adjust or terminate the process based on actual conditions rather than relying on pre-calculated timing

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system monitors changes in extraction current parameters during processing. When specific changes in the extraction current are detected, these indicate material removal events or layer transitions, allowing dynamic process control that adapts to actual processing conditions

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise endpoint detection without additional signal measurement equipment, reducing interference and improving process control by monitoring extraction current changes to determine when a layer is complete or nearing completion.

Implementation Method 1

a plasma generation component to generate a plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

an extraction system to extract ions from the plasma and direct the ions as processing ions to the substrate

Methodology Applied
Scientific EffectIon extraction: Ion Repulsion/Attraction

Data Source

PatentUS9960089B2Apparatus and method for endpoint detection
Publication Date: 2018.05.01 VARIAN SEMICON EQUIP ASSC INC
  • US9960089B2 patent drawing
  • US9960089B2 patent drawing
  • US9960089B2 patent drawing

AI summary

An apparatus to control processing conditions for a substrate. The apparatus may include a current measurement component to perform a plurality of extraction current measurements for extraction current in a processing apparatus housing the substrate, the extraction current comprising ions extracted from a plasma and directed to the substrate; and an endpoint detection component comprising logic to generate an endpoint detection signal based upon a change in extraction current during the plurality of extraction current measurements.