Face-to-Face TSV Die Stacking for Compact Interconnect and Heat Flow
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Solution Overview
Problem
The miniaturization of semiconductive devices during packaging requires 2D multiple-die footprints, which poses challenges in achieving efficient inter-chip connections and heat management within a compact footprint.
Innovation Solution
The implementation of face-to-face (F2F) through-silicon via (TSV) multi-die apparatus with redistribution layers (RDLs) for packaging substrates, allowing for inter-chip connections within the first die footprint and effective heat management using a single heat sink.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If 2D multiple-die footprints are used for miniaturization, then device density is improved, but inter-chip connection efficiency deteriorates
Solution Approach 1:
The patent transitions from 2D lateral connections to 3D vertical connections through TSVs. Multiple dies are stacked vertically with TSVs providing through-silicon vias for inter-chip connections, enabling efficient connectivity in the vertical dimension while maintaining compact 2D footprint.
Solution Approach 2:
The system segments the computing apparatus into multiple independent dies stacked vertically. Each die can be separately manufactured and then interconnected through TSVs, allowing miniaturization while maintaining connection efficiency through the segmented modular architecture.
2Area of moving object
If 2D multiple-die footprints are used for miniaturization, then device density is improved, but heat management capability deteriorates
Solution Approach 1:
Heat management is enhanced by utilizing the vertical dimension through TSVs that serve dual purposes: electrical interconnection and thermal conduction. The TSV structure provides direct thermal pathways from active regions through the silicon stack to heat sinks, improving heat dissipation in the compact 3D configuration.
3Speed
If face-to-face TSV multi-die apparatus is implemented, then signal transmission speed is improved, but manufacturing complexity increases
Solution Approach 1:
TSVs are formed through the silicon wafers before die stacking, and redistribution layers are prepared in advance on each die. This preliminary preparation of interconnection structures enables efficient face-to-face bonding and rapid signal transmission while managing manufacturing complexity through staged processing.
Solution Approach 2:
Multiple dies are nested vertically in a stacked configuration, with TSVs providing interconnections between nested layers. The redistribution layers are integrated within the die structures, creating a compact nested architecture that achieves high-speed signaling through short vertical interconnects.
Data Source
AI summary
Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.